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FDD6612A

Onsemi

FDD6612A by Onsemi

FDD6612A by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.02 ohm RDS(on), and 175°C Max Operating Temp. Perfect for high-power circuit designs requiring efficient switching capabilities in compact layouts.

Median Price

$0.610

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 252,473 parts In-Stock

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-

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$0.562

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$0.466

10k+ parts

$0.416

252,473

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$0.562

$0.466

$0.416

DigiKey

USA . 252,047 parts In-Stock

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$0.700

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Verical

USA . 82,286 parts In-Stock

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$0.610

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$0.544

82,286

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$0.610

$0.544

Distributors (In-Stock)

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Digiode

USA . 1,520 parts In-Stock

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$0.458

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1,520

$0.458

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Component Electronics Inc.

Canada . 25 parts In-Stock

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$1.540

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$1.150

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$1.000

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25

$1.540

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Vyrian

USA . 183,261 parts In-Stock

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Bristol Electronics

USA . 135,373 parts In-Stock

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Inventory MP

USA . 135,270 parts In-Stock

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Chip Stock

USA . 60,000 parts In-Stock

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Flip Electronics

USA . 17,500 parts In-Stock

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Sensible Micro Corp

USA . 13,832 parts In-Stock

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Velocity Electronics

USA . 11,679 parts In-Stock

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Electronic Expediters

USA . 6,298 parts In-Stock

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Cyclops Electronics Ltd

UK . 5,563 parts In-Stock

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Prism Electronics

USA . 3,188 parts In-Stock

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Electronics Depot

USA . 2,657 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

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ComSIT USA

USA . 2,500 parts In-Stock

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R&J Components

USA . 2,201 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,036 parts In-Stock

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Dan-Mar Components

USA . 1,036 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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GSS - Global Semi Support

USA . 300 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 919 parts In-Stock

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$0.434

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919

$0.434

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Corohmni

South Africa . 121 parts In-Stock

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$0.482

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121

$0.482

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Component Stockers USA

USA . 19,767 parts In-Stock

1+ parts

$0.490

100+ parts

$0.460

1k+ parts

$0.410

10k+ parts

$0.410

19,767

$0.490

$0.460

$0.410

$0.410

Ampacity Inc.

Singapore . 183,042 parts In-Stock

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$0.890

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183,042

$0.890

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Aztec Data Supply Inc.

USA . 4,201 parts In-Stock

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$1.176

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RC Electronics

USA . 75,868 parts In-Stock

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$0.480

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$0.430

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$0.420

75,868

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$0.420

Epart123

USA . 40,000 parts In-Stock

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$0.420

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Kepictronics

USA . 27,860 parts In-Stock

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Perfect Parts

USA . 19,622 parts In-Stock

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SupplyDigital Components

Austria . 7,812 parts In-Stock

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Kulean Microsystems

USA . 7,442 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 4,139 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Assy Fe

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TANS Electronics

Latvia . 1,162 parts In-Stock

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Computer Components Inc. - USA

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Continental Prestige Electronics

USA . 911 parts In-Stock

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UHIMA Technologies

Türkiye . 864 parts In-Stock

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Argo Parts USA

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Lixinc

USA . 494 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unleash the power of innovation with the FDD6612A by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This Power Field Effect Transistor (FET) is designed for switching applications, offering customers enhanced performance and efficiency. With a maximum pulsed drain current of 60A and a low on-resistance of 0.02 ohm, the FDD6612A delivers unparalleled value and benefits. Whether you're looking to optimize your system's performance or reduce power consumption, this N-channel transistor is the perfect solution for your needs. Elevate your projects with Onsemi's FDD6612A today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and resistance to external factors, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity allows for efficient switching capabilities, offering high performance in controlling current flow.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances protection against reverse current flow, making it a convenient choice for applications requiring this feature.

Transistor Application: SWITCHING

Designed for switching applications, this FET delivers fast response times and high efficiency in controlling power flow, ensuring optimal performance in various systems.

Surface Mount: YES

The surface mount capability allows for easy integration into compact electronic designs, saving space and enhancing overall system efficiency.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET offers reliable overvoltage protection and ensures stable operation in demanding conditions.

Maximum Pulsed Drain Current (IDM): 60 A

The high pulsed drain current rating of 60A allows for handling sudden surges in power, making it suitable for applications requiring robust performance under peak load conditions.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this FET can withstand high temperature environments, ensuring reliable performance in challenging thermal conditions.

Technical Specifications

Power Field Effect Transistors (FET) FDD6612A attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (EAS):

90 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

30 A

Maximum Drain Current (ID):

9.5 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

60 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDD6612A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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