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FDC365P

Onsemi

FDC365P by Onsemi

The Onsemi FDC365P is a P-CHANNEL FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 4.3A, 0.055 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.

Median Price

$0.538

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,650 parts In-Stock

1+ parts

$0.244

100+ parts

$0.217

1k+ parts

$0.212

10k+ parts

-

2,650

$0.244

$0.217

$0.212

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Farnell

UK . 31,990 parts In-Stock

1+ parts

$0.832

100+ parts

$0.547

1k+ parts

$0.381

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31,990

$0.832

$0.547

$0.381

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Element14

Singapore . 21,932 parts In-Stock

1+ parts

$1.640

100+ parts

$1.080

1k+ parts

$0.753

10k+ parts

$0.644

21,932

$1.640

$1.080

$0.753

$0.644

Verical

USA . 2,624 parts In-Stock

1+ parts

-

100+ parts

$0.199

1k+ parts

$0.195

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2,624

-

$0.199

$0.195

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,884 parts In-Stock

1+ parts

$0.149

100+ parts

-

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1,884

$0.149

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Digiode

USA . 2,085 parts In-Stock

1+ parts

$0.232

100+ parts

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2,085

$0.232

-

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Chip Stock

USA . 4,500 parts In-Stock

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4,500

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Bristol Electronics

USA . 3,228 parts In-Stock

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3,228

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TME

Poland . 976 parts In-Stock

1+ parts

-

100+ parts

$0.148

1k+ parts

$0.134

10k+ parts

$0.124

976

-

$0.148

$0.134

$0.124

ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

1+ parts

-

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200

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LIBRA Elektronik GmbH

Germany . 116 parts In-Stock

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116

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PC Components Company LLC

USA . 29 parts In-Stock

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29

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,524 parts In-Stock

1+ parts

$0.169

100+ parts

-

1k+ parts

-

10k+ parts

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2,524

$0.169

-

-

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Corohmni

South Africa . 253 parts In-Stock

1+ parts

$0.199

100+ parts

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253

$0.199

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Corphita

USA . 2,099 parts In-Stock

1+ parts

$0.220

100+ parts

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2,099

$0.220

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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RC Electronics

USA . 89,124 parts In-Stock

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Kepictronics

USA . 42,229 parts In-Stock

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42,229

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QUARKTWIN TECHNOLOGY LTD

USA . 22,674 parts In-Stock

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22,674

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TANS Electronics

Latvia . 5,650 parts In-Stock

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5,650

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Problanco Electronics

Mexico . 5,031 parts In-Stock

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5,031

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Argo Parts USA

USA . 4,353 parts In-Stock

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4,353

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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SupplyDigital Components

Austria . 3,197 parts In-Stock

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3,197

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Glotronic Ltd.

UK . 2,120 parts In-Stock

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Supply Digital

USA . 1,763 parts In-Stock

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1,763

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Continental Prestige Electronics

USA . 1,105 parts In-Stock

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1,105

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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783

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Kulean Microsystems

USA . 656 parts In-Stock

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656

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Aranea Global

USA . 500 parts In-Stock

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500

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Futuretech Components

Singapore . 437 parts In-Stock

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437

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Overview

Discover the power of the FDC365P by Onsemi, a top-quality P-CHANNEL Small Signal Field Effect Transistor (FET) with a built-in diode. Perfect for switching applications, this enhancement mode transistor offers a maximum drain current of 4.3 A and a low on-resistance of 0.055 ohm. With its high reliability and efficient performance, the FDC365P is the ideal choice for a wide range of electronic devices. Trust Onsemi's expertise in semiconductor technology and elevate your designs with the value and benefits of this outstanding component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high performance and efficiency, making this transistor a good choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the functionality of the transistor, providing added convenience and versatility.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and fast response times.

Surface Mount: YES

Surface mount technology saves space and offers a more compact design, making this transistor suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 35 V

The high breakdown voltage ensures the transistor can withstand voltage fluctuations and surges, increasing its reliability.

Maximum Drain Current (Abs) (ID): 4.3 A

With a high drain current capacity, this transistor can handle higher loads and provide efficient performance.

Maximum Power Dissipation (Abs): 1.6 W

The low maximum power dissipation ensures the transistor operates efficiently without overheating.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand higher temperatures without compromising its performance.

Maximum Feedback Capacitance (Crss): 80 pF

The low feedback capacitance helps reduce signal distortion and improve overall performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC365P attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

35 V

Maximum Drain Current (Abs) (ID):

4.3 A

Maximum Drain Current (ID):

4.3 A

Maximum Drain-Source On Resistance:

.055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

80 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC365P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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