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FDC3612

Onsemi

FDC3612 by Onsemi

The Onsemi FDC3612 is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.6A and 0.125 ohm on-resistance, operating in enhancement mode. With a small outline package style and matte tin terminal finish, it offers reliable performance up to 150°C.

Median Price

$0.286

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 45,000 parts In-Stock

1+ parts

$0.300

100+ parts

$0.240

1k+ parts

$0.214

10k+ parts

$0.182

45,000

$0.300

$0.240

$0.214

$0.182

Mouser Electronics

USA . 26,025 parts In-Stock

1+ parts

$1.070

100+ parts

$0.373

1k+ parts

-

10k+ parts

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26,025

$1.070

$0.373

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DigiKey

USA . 6,974 parts In-Stock

1+ parts

$1.070

100+ parts

$0.436

1k+ parts

$0.304

10k+ parts

-

6,974

$1.070

$0.436

$0.304

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Newark

USA . 2,550 parts In-Stock

1+ parts

$1.100

100+ parts

$0.448

1k+ parts

$0.345

10k+ parts

-

2,550

$1.100

$0.448

$0.345

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Chip1Stop

Japan . 66,000 parts In-Stock

1+ parts

-

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-

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$0.183

66,000

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$0.183

Verical

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

$0.240

1k+ parts

$0.214

10k+ parts

$0.182

45,000

-

$0.240

$0.214

$0.182

Rochester

USA . 41,689 parts In-Stock

1+ parts

-

100+ parts

$0.272

1k+ parts

$0.226

10k+ parts

$0.202

41,689

-

$0.272

$0.226

$0.202

Element14

Singapore . 8,660 parts In-Stock

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-

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8,660

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Farnell

UK . 4,960 parts In-Stock

1+ parts

-

100+ parts

$0.273

1k+ parts

$0.225

10k+ parts

$0.203

4,960

-

$0.273

$0.225

$0.203

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,369 parts In-Stock

1+ parts

$0.201

100+ parts

-

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1,369

$0.201

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.274

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300

$0.274

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TME

Poland . 2,780 parts In-Stock

1+ parts

$0.780

100+ parts

$0.310

1k+ parts

$0.293

10k+ parts

-

2,780

$0.780

$0.310

$0.293

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Chip Stock

USA . 284,600 parts In-Stock

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284,600

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IBS Electronics

USA . 141,000 parts In-Stock

1+ parts

-

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$0.491

141,000

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$0.491

Flip Electronics

USA . 117,000 parts In-Stock

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117,000

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NAC Semi

USA . 54,000 parts In-Stock

1+ parts

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$0.730

54,000

-

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$0.730

Vyrian

USA . 28,181 parts In-Stock

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28,181

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Cyclops Electronics Ltd

UK . 15,000 parts In-Stock

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15,000

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Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

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10,000

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Sunrise Surplus Inc.

USA . 7,893 parts In-Stock

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7,893

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LIBRA Elektronik GmbH

Germany . 2,939 parts In-Stock

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2,939

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J2 Sourcing AB

Sweden . 648 parts In-Stock

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648

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Semi Source

USA . 60 parts In-Stock

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60

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Prism Electronics

USA . 13 parts In-Stock

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13

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 29,451 parts In-Stock

1+ parts

$0.151

100+ parts

-

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29,451

$0.151

-

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Semicontronic

India . 28,334 parts In-Stock

1+ parts

$0.151

100+ parts

$0.147

1k+ parts

$0.146

10k+ parts

-

28,334

$0.151

$0.147

$0.146

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Decca Corp

Germany . 27,601 parts In-Stock

1+ parts

$0.151

100+ parts

$0.148

1k+ parts

$0.147

10k+ parts

-

27,601

$0.151

$0.148

$0.147

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Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.183

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280

$0.183

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Corphita

USA . 1,200 parts In-Stock

1+ parts

$0.191

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1,200

$0.191

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Argo Parts USA

USA . 2,229 parts In-Stock

1+ parts

$0.268

100+ parts

-

1k+ parts

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10k+ parts

$0.260

2,229

$0.268

-

-

$0.260

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.274

100+ parts

-

1k+ parts

$0.260

10k+ parts

$0.255

1,000

$0.274

-

$0.260

$0.255

Aztec Data Supply Inc.

USA . 172 parts In-Stock

1+ parts

$0.647

100+ parts

-

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172

$0.647

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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100+ parts

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90,000

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RC Electronics

USA . 87,810 parts In-Stock

1+ parts

-

100+ parts

$0.300

1k+ parts

$0.270

10k+ parts

$0.260

87,810

-

$0.300

$0.270

$0.260

Kepictronics

USA . 57,000 parts In-Stock

1+ parts

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57,000

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Futuretech Components

Singapore . 50,000 parts In-Stock

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Perfect Parts

USA . 41,882 parts In-Stock

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41,882

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QUARKTWIN TECHNOLOGY LTD

USA . 28,887 parts In-Stock

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28,887

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Glotronic Ltd.

UK . 28,800 parts In-Stock

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28,800

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SupplyDigital Components

Austria . 8,165 parts In-Stock

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8,165

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Kulean Microsystems

USA . 7,676 parts In-Stock

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7,676

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Lixinc

USA . 6,350 parts In-Stock

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6,350

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Eastek

USA . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 4,015 parts In-Stock

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TANS Electronics

Latvia . 3,097 parts In-Stock

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3,097

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Continental Prestige Electronics

USA . 3,023 parts In-Stock

1+ parts

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100+ parts

$0.333

1k+ parts

$0.217

10k+ parts

$0.176

3,023

-

$0.333

$0.217

$0.176

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 2,814 parts In-Stock

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2,814

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Alle Elektronik GmbH

Germany . 1,876 parts In-Stock

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1,876

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Supply Digital

USA . 1,830 parts In-Stock

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1,830

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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127

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Speed Components Ltd (Excess)

Israel . 45 parts In-Stock

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45

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Overview

Discover the exceptional quality and reliability of the FDC3612 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Field Effect Transistors (FET) like the FDC3612 that offer superior performance and efficiency for switching applications. With a built-in diode and N-channel configuration, this transistor provides maximum value and benefits to our customers. Trust Onsemi for innovative solutions that exceed expectations and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics and are commonly used in switching applications, making this transistor a reliable choice.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode adds functionality to the transistor, making it suitable for applications where a diode is also required.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in current flow efficiently.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 100 V

The high breakdown voltage of 100V provides a safety margin for applications requiring higher voltage handling capabilities.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the on/off switching characteristics, making this transistor suitable for precision applications.

Maximum Drain Current (Abs) (ID): 2.6 A

The maximum drain current rating of 2.6A allows for handling higher current loads, making this transistor versatile for various applications.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8W, this transistor can handle moderate power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics and reliability, ensuring the transistor operates efficiently.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable operation in a wide range of environmental conditions.

Maximum Drain-Source On Resistance: 0.125 ohm

The low on-resistance of 0.125 ohms ensures minimal power loss and efficient operation in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC3612 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

2.6 A

Maximum Drain Current (ID):

2.6 A

Maximum Drain-Source On Resistance:

.125 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC3612 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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