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FDC3512_NL

Fairchild Semiconductor

FDC3512_NL by Fairchild Semiconductor

FDC3512_NL by Fairchild Semiconductor is a N-CHANNEL FET with 80V DS breakdown voltage, ideal for SWITCHING applications. It features a max drain current of 3A, 0.077 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 1.6W and can withstand temperatures from -55 to 150°C.

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Overview

Unlock the power of efficient switching with the FDC3512_NL by Fairchild Semiconductor. Designed with precision and quality in mind, this Small Signal Field Effect Transistor (FET) offers customers a reliable solution for their electronic applications. With a built-in diode and N-Channel configuration, this transistor is perfect for a variety of switching tasks. Its compact design and high performance make it a valuable asset for any project. Trust in Fairchild Semiconductor's expertise and choose the FDC3512_NL for your next electronics endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for housing the transistor, ensuring longevity and affordability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance characteristics, making this transistor ideal for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode provides added functionality and versatility, allowing for more complex circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 80 V

High breakdown voltage ensures reliability and protection against voltage spikes or surges.

Package Shape: RECTANGULAR

Rectangular shape allows for compact placement and efficient use of space on a circuit board.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and efficiency in signal processing applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for use in demanding environments without performance degradation.

Maximum Drain Current (ID): 3 A

High maximum drain current capacity enables handling of heavy loads in circuit applications.

Maximum Power Dissipation (Abs): 1.6 W

Good power dissipation capability ensures the transistor can handle high power levels without overheating.

Maximum Drain-Source On Resistance: 0.077 ohm

Low on-resistance ensures efficient power flow and minimal losses during operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC3512_NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.077 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC3512_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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