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FDA16N50LDTU

Onsemi

FDA16N50LDTU by Onsemi

FDA16N50LDTU by Onsemi is a N-CHANNEL FET with 16.5A max drain current and 205W max power dissipation. Ideal for high-power applications, it operates at up to 150°C, featuring metal-oxide semiconductor technology.

Median Price

$1.630

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 55 parts In-Stock

1+ parts

$1.735

100+ parts

$1.452

1k+ parts

$1.232

10k+ parts

$1.210

55

$1.735

$1.452

$1.232

$1.210

Rochester

USA . 28,520 parts In-Stock

1+ parts

-

100+ parts

$1.360

1k+ parts

$1.220

10k+ parts

$1.140

28,520

-

$1.360

$1.220

$1.140

DigiKey

USA . 28,520 parts In-Stock

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-

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$1.790

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28,520

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$1.790

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Verical

USA . 17,280 parts In-Stock

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-

100+ parts

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$1.525

10k+ parts

$1.425

17,280

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-

$1.525

$1.425

Flip Electronics (Authorized)

USA . 2,507 parts In-Stock

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-

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2,507

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Distributors (In-Stock)

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Digiode

USA . 1,355 parts In-Stock

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$1.444

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1,355

$1.444

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Vyrian

USA . 2,846 parts In-Stock

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$1.520

100+ parts

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2,846

$1.520

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Flip Electronics

USA . 2,507 parts In-Stock

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2,507

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Distributors (Availability)

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Corphita

USA . 998 parts In-Stock

1+ parts

$1.368

100+ parts

-

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998

$1.368

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Corohmni

South Africa . 167 parts In-Stock

1+ parts

$1.520

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167

$1.520

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Northwest PG Solutions

USA . 1,585 parts In-Stock

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$2.552

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1,585

$2.552

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,134 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 6,837 parts In-Stock

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SupplyDigital Components

Austria . 6,726 parts In-Stock

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6,726

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Microchip USA

USA . 5,878 parts In-Stock

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TANS Electronics

Latvia . 5,013 parts In-Stock

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Supply Digital

USA . 2,086 parts In-Stock

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2,086

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Native Components

USA . 444 parts In-Stock

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$2.250

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444

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$2.250

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Kepictronics

USA . 360 parts In-Stock

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360

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Kulean Microsystems

USA . 52 parts In-Stock

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52

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UHIMA Technologies

Türkiye . 4 parts In-Stock

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Overview

Discover the high-quality FDA16N50LDTU Power Field Effect Transistor by Onsemi, a trusted manufacturer known for reliable and innovative products. Ideal for a variety of applications, this N-CHANNEL FET offers superior performance and efficiency. With a maximum drain current of 16.5 A and a power dissipation of 205 W, this transistor is designed to meet your power needs with ease. Upgrade your projects with the advanced technology of this METAL-OXIDE SEMICONDUCTOR device, providing exceptional value and benefits for your electrical systems.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and lower on-resistance compared to P-channel FETs, making this product a good choice for high power applications.

Configuration: SINGLE

Single configuration FETs are easier to control and integrate into circuits, offering simplicity and efficiency in design.

Maximum Drain Current (Abs) (ID): 16.5 A

With a maximum drain current of 16.5 A, this FET is capable of handling high current loads, making it suitable for power-hungry applications.

Maximum Power Dissipation (Abs): 205 W

The high maximum power dissipation of 205 W indicates the FET's ability to handle heat and maintain efficiency even under high power conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance, reliability, and efficiency, making this FET a reliable choice for power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can operate in high-temperature environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides a reliable and durable contact surface, ensuring good connectivity and longevity for the FET.

Technical Specifications

Power Field Effect Transistors (FET) FDA16N50LDTU attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

16.5 A

Maximum Drain Current (ID):

16.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trade Compliance

FDA16N50LDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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