Loading...

FDA16N50-F109

Onsemi

FDA16N50-F109 by Onsemi

The Onsemi FDA16N50-F109 is a N-CHANNEL FET with 500V DS Breakdown Voltage and 66A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 205W and operates at up to 150°C. The transistor features a built-in diode, 0.38 ohm RDS(on), and comes in a PLASTIC/EPOXY package with THROUGH-HOLE terminals.

Median Price

$2.174

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 480 parts In-Stock

1+ parts

$2.760

100+ parts

$2.210

1k+ parts

$1.820

10k+ parts

-

480

$2.760

$2.210

$1.820

-

Mouser Electronics

USA . 1,097 parts In-Stock

1+ parts

$4.130

100+ parts

$1.870

1k+ parts

$1.620

10k+ parts

-

1,097

$4.130

$1.870

$1.620

-

DigiKey

USA . 301 parts In-Stock

1+ parts

$4.130

100+ parts

$2.274

1k+ parts

$1.565

10k+ parts

$1.413

301

$4.130

$2.274

$1.565

$1.413

Arrow

USA . 1,140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.536

10k+ parts

$1.452

1,140

-

-

$1.536

$1.452

Rochester

USA . 878 parts In-Stock

1+ parts

-

100+ parts

$1.420

1k+ parts

$1.270

10k+ parts

$1.190

878

-

$1.420

$1.270

$1.190

Verical

USA . 878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.587

10k+ parts

$1.488

878

-

-

$1.587

$1.488

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,535 parts In-Stock

1+ parts

$1.568

100+ parts

-

1k+ parts

-

10k+ parts

-

2,535

$1.568

-

-

-

Vyrian

USA . 2,835 parts In-Stock

1+ parts

$1.650

100+ parts

-

1k+ parts

-

10k+ parts

-

2,835

$1.650

-

-

-

NAC Semi

USA . 720 parts In-Stock

1+ parts

-

100+ parts

$2.370

1k+ parts

$2.190

10k+ parts

-

720

-

$2.370

$2.190

-

Flip Electronics

USA . 158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

158

-

-

-

-

Microfarads

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Bristol Electronics

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 478 parts In-Stock

1+ parts

$0.705

100+ parts

-

1k+ parts

-

10k+ parts

-

478

$0.705

-

-

-

Northwest PG Solutions

USA . 1,989 parts In-Stock

1+ parts

$0.775

100+ parts

-

1k+ parts

-

10k+ parts

-

1,989

$0.775

-

-

-

Ampacity Inc.

Singapore . 416 parts In-Stock

1+ parts

$1.400

100+ parts

-

1k+ parts

-

10k+ parts

-

416

$1.400

-

-

-

Corphita

USA . 1,739 parts In-Stock

1+ parts

$1.485

100+ parts

-

1k+ parts

-

10k+ parts

-

1,739

$1.485

-

-

-

Corohmni

South Africa . 66 parts In-Stock

1+ parts

$1.650

100+ parts

-

1k+ parts

-

10k+ parts

-

66

$1.650

-

-

-

Metaverse IC Inc.

Canada . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,701 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,701

-

-

-

-

Microchip USA

USA . 8,570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,570

-

-

-

-

Problanco Electronics

Mexico . 8,362 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,362

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,850

-

-

-

-

SupplyDigital Components

Austria . 5,564 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,564

-

-

-

-

Kulean Microsystems

USA . 4,151 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,151

-

-

-

-

Supply Digital

USA . 1,188 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,188

-

-

-

-

Perfect Parts

USA . 1,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,008

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Kepictronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Eastek

USA . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

GreenTree Electronics

Israel . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

UHIMA Technologies

Türkiye . 532 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

532

-

-

-

-

TANS Electronics

Latvia . 494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

494

-

-

-

-

Overview

Unlock the power of innovation with the Onsemi FDA16N50-F109 Power Field Effect Transistor. Manufactured by Onsemi, a trusted name in semiconductor technology, this N-CHANNEL transistor offers high-quality performance for switching applications. With a minimum DS breakdown voltage of 500V and a maximum drain current of 16.5A, this transistor is designed to meet the demands of modern electronic devices. Experience enhanced efficiency and reliability with the FDA16N50-F109, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs generally have better performance and efficiency compared to P-Channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps manage reverse current flow and protects the circuit from damage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 500 V

Can handle high voltage applications, making it suitable for a wide range of electronic devices.

Maximum Pulsed Drain Current (IDM): 66 A

Capable of handling high current spikes, ideal for power management in demanding applications.

Maximum Power Dissipation (Abs): 205 W

High power dissipation capability allows for continuous operation under heavy load conditions.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in challenging environments.

Technical Specifications

Power Field Effect Transistors (FET) FDA16N50-F109 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

780 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

16.5 A

Maximum Drain Current (ID):

16.5 A

Maximum Drain-Source On Resistance:

.38 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

66 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDA16N50-F109 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5