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FCU360N65S3R0

Onsemi

FCU360N65S3R0 by Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 75 parts In-Stock

1+ parts

$0.588

100+ parts

-

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75

$0.588

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Chip1Stop

Japan . 75 parts In-Stock

1+ parts

$1.050

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75

$1.050

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DigiKey

USA . 1,520 parts In-Stock

1+ parts

$2.930

100+ parts

$1.371

1k+ parts

$1.058

10k+ parts

$0.978

1,520

$2.930

$1.371

$1.058

$0.978

Rochester

USA . 3,891 parts In-Stock

1+ parts

-

100+ parts

$1.250

1k+ parts

$1.040

10k+ parts

$0.925

3,891

-

$1.250

$1.040

$0.925

Verical

USA . 3,521 parts In-Stock

1+ parts

-

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$1.300

10k+ parts

$1.156

3,521

-

-

$1.300

$1.156

Master Electronics

USA . 1,800 parts In-Stock

1+ parts

-

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$0.998

1k+ parts

$0.948

10k+ parts

$0.878

1,800

-

$0.998

$0.948

$0.878

Flip Electronics (Authorized)

USA . 197 parts In-Stock

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Distributors (In-Stock)

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Vyrian

USA . 2,191 parts In-Stock

1+ parts

$0.883

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2,191

$0.883

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Digiode

USA . 2,332 parts In-Stock

1+ parts

$0.978

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2,332

$0.978

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Flip Electronics

USA . 1,882 parts In-Stock

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1,882

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Rapid Electronics

USA . 1,800 parts In-Stock

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1,800

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Distributors (Availability)

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Corohmni

South Africa . 289 parts In-Stock

1+ parts

$0.883

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289

$0.883

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Corphita

USA . 1,537 parts In-Stock

1+ parts

$0.927

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1,537

$0.927

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Component Stockers USA

USA . 17,702 parts In-Stock

1+ parts

$1.030

100+ parts

$0.970

1k+ parts

$0.890

10k+ parts

$1.210

17,702

$1.030

$0.970

$0.890

$1.210

Continental Prestige Electronics

USA . 1,800 parts In-Stock

1+ parts

$1.070

100+ parts

$0.705

1k+ parts

$0.491

10k+ parts

-

1,800

$1.070

$0.705

$0.491

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Microchip USA

USA . 3,303 parts In-Stock

1+ parts

$15.015

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3,303

$15.015

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Perfect Parts

USA . 59,920 parts In-Stock

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Authorized Procurement Solutions

USA . 10,620 parts In-Stock

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SupplyDigital Components

Austria . 7,142 parts In-Stock

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Problanco Electronics

Mexico . 5,899 parts In-Stock

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5,899

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Kulean Microsystems

USA . 5,117 parts In-Stock

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5,117

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Northwest PG Solutions

USA . 2,252 parts In-Stock

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2,252

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TANS Electronics

Latvia . 370 parts In-Stock

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370

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Native Components

USA . 154 parts In-Stock

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154

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UHIMA Technologies

Türkiye . 50 parts In-Stock

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50

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Technical Specifications

Power Field Effect Transistors (FET) FCU360N65S3R0 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

40 mJ

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.36 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

25 A

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FCU360N65S3R0 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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