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FCU3400N80Z

Onsemi

FCU3400N80Z by Onsemi

FCU3400N80Z by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 4A Max Pulsed Drain Current and 3.4 ohm Max RDS(on). Operating in ENHANCEMENT MODE, it has a 32W Max Power Dissipation and operates b/w -55 to 150 °C.

Median Price

$0.716

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 600 parts In-Stock

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$0.383

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600

$0.383

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Chip1Stop

Japan . 600 parts In-Stock

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$0.651

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600

$0.651

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Mouser Electronics

USA . 162 parts In-Stock

1+ parts

$1.180

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$0.771

1k+ parts

$0.570

10k+ parts

$0.510

162

$1.180

$0.771

$0.570

$0.510

Farnell

UK . 7,130 parts In-Stock

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$0.523

7,130

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$0.523

Rochester

USA . 5,330 parts In-Stock

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$0.716

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$0.594

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$0.529

5,330

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$0.716

$0.594

$0.529

Flip Electronics (Authorized)

USA . 3,938 parts In-Stock

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3,938

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Verical

USA . 3,600 parts In-Stock

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$0.742

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$0.662

3,600

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$0.742

$0.662

DigiKey

USA . 1,691 parts In-Stock

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$0.890

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1,691

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$0.890

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Distributors (In-Stock)

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Vyrian

USA . 590 parts In-Stock

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$0.420

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590

$0.420

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Digiode

USA . 2,439 parts In-Stock

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$0.444

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2,439

$0.444

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Flip Electronics

USA . 3,938 parts In-Stock

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DigiKey Marketplace

USA . 3,600 parts In-Stock

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Corohmni

South Africa . 388 parts In-Stock

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$0.420

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388

$0.420

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Corphita

USA . 2,098 parts In-Stock

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$0.420

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Microchip USA

USA . 6,288 parts In-Stock

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$3.640

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,794 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 7,648 parts In-Stock

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Kulean Microsystems

USA . 3,569 parts In-Stock

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Problanco Electronics

Mexico . 3,019 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 1,770 parts In-Stock

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Continental Prestige Electronics

USA . 1,691 parts In-Stock

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$0.523

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Northwest PG Solutions

USA . 1,583 parts In-Stock

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Supply Digital

USA . 1,257 parts In-Stock

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UHIMA Technologies

Türkiye . 569 parts In-Stock

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569

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TANS Electronics

Latvia . 367 parts In-Stock

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Native Components

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Overview

Unleash the power of innovation with the FCU3400N80Z by Onsemi. Crafted with precision and expertise, this Power Field Effect Transistor (FET) offers unparalleled performance in switching applications. With a robust design and N-Channel configuration, this transistor provides reliability and efficiency like no other. Whether you're looking to optimize power management or enhance system performance, the FCU3400N80Z delivers exceptional value and benefits that cater to your unique needs. Trust in Onsemi's legacy of excellence and elevate your projects to new heights with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of current flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Minimum DS Breakdown Voltage: 800 V

Can handle high voltage levels, making it suitable for power applications.

Maximum Drain-Source On Resistance: 3.4 ohm

Low on-resistance allows for efficient current flow and minimal power loss.

Maximum Power Dissipation (Abs): 32 W

Capable of dissipating heat effectively, ensuring stable operation under high power conditions.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, providing versatility in various applications.

Technical Specifications

Power Field Effect Transistors (FET) FCU3400N80Z attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

12.8 mJ

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

3.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

4 A

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

93 ns

Maximum Turn On Time (ton):

53 ns

Trade Compliance

FCU3400N80Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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