Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FCPF260N60E by Onsemi is a N-CHANNEL FET with 15A ID and 36W power dissipation. Ideal for high-power applications, it operates up to 150°C. Its single configuration and MOSFET technology make it suitable for various power management systems.
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UHIMA Technologies
N-CHANNEL FETs generally have lower on-state resistance and higher current-handling capabilities compared to P-CHANNEL FETs, making them suitable for high power applications.
Single configuration FETs are easy to use and simplify circuit design, making them ideal for applications where space and complexity need to be minimized.
A high maximum drain current rating of 15A ensures that the FET can handle large current loads without overheating, making it suitable for power applications.
With a maximum power dissipation of 36W, this FET can handle high power levels efficiently, making it reliable for applications requiring power switching.
MOSFET technology offers low on-state resistance, fast switching speeds, and high efficiency, making it ideal for power applications where performance is key.
The high maximum operating temperature of 150°C allows for reliable performance in harsh environments or applications where temperature can fluctuate, ensuring long-term reliability.
The matte tin finish provides good conductivity and solderability, while the annealed feature ensures a stable connection, making installation and usage of the FET convenient and reliable.
Power Field Effect Transistors (FET) FCPF260N60E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JESD-609 Code:
No. of Elements:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
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Maximum Time At Peak Reflow Temperature (s):
FCPF260N60E Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BAV99
National Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
M24308/2-1F
Tyco Electronics Amp
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;
1N4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WS
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
DP83848IVVX/NOPB
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
LM7805CT/NOPB
Texas Instruments
LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.
2N2222A
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMBJ18CA
Semitron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
Onsemi
EU2B-YS2J03C
Idec
ROTARY SWITCH;
LM555CMX
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
LL4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Plessey Semiconductors Discrete Components Div
Other Transistors;
Hitano Enterprise
Microsemi
NDT3055
NDT3055 by Onsemi is a Power FET with 60V DS breakdown voltage, 25A IDM, and 0.1 ohm RDS(on). Ideal for switching applications, it features N-CHANNEL polarity, SINGLE configuration with built-in diode. Operating in enhancement mode at up to 150°C, this MOSFET has GULL WING terminals and is surface mountable.
FQP47P06
FQP47P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 47A Drain Current. Ideal for SWITCHING applications, it features an IDM of 188A, EAS of 820mJ, and 0.026 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 160W at 175°C.
AUIRF7316QTR
Infineon Technologies
AUIRF7316QTR by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 30A IDM, and 0.058 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include 2 elements with built-in diode in a SMALL OUTLINE package.
AUIRFR5305TRL
AUIRFR5305TRL by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features a 0.065 ohm Drain-Source On Resistance and 280mJ Avalanche Energy Rating. Suitable for automotive use with AEC-Q101 standard compliance.
IRLML2030TRPBF
IRLML2030TRPBF by Infineon is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.1 ohm Drain-Source On Resistance and 12pF Feedback Capacitance.
BSP89H6327XTSA1
Infineon's BSP89H6327XTSA1 is a N-CHANNEL Power FET with 240V DS Breakdown Voltage. It features 1.4A IDM, 0.35A ID, and 6ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and small outline package style.
IRFP460
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-247;
IRF540PBF
Vishay Intertechnology
Vishay Intertechnology's IRF540PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM, 230mJ EAS, and 0.077 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures up to 175°C.
2N7002PV,115
NXP Semiconductors
2N7002PV,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.35A Max Drain Current and 0.5W Max Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
NDT2955
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AOD4185
Alpha & Omega Semiconductor
AOD4185 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage, 115A IDM, and 0.015 ohm RDS(ON). Ideal for power management applications requiring high drain current capabilities in a compact SMALL OUTLINE package.
AUIRFR5305TR
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Drain-Source On Resistance: .065 ohm; JEDEC-95 Code: TO-252AA;
PMV20ENR
PMV20ENR by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 7.6A and power dissipation of 6.94W in enhancement mode. Ideal for applications requiring high-power handling, it operates at temperatures up to 150°C and features surface mount configuration for easy installation.
IPZ40N04S5L4R8ATMA1
Infineon's IPZ40N04S5L4R8ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0067 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRFL9014PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
NDT452AP
NDT452AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -65 to 150 °C, it has 0.065 ohm On Resistance and can handle up to 15A Pulsed Drain Current.
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
FDMS86252L
FDMS86252L by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 30A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 50W and can withstand temperatures up to 150°C.
JANTX2N6796
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: WIRE; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
IRF540NSTRLPBF
IRF540NSTRLPBF by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, suitable for SWITCHING applications. It has a max Drain Current of 33A and Power Dissipation of 130W. The transistor operates in ENHANCEMENT MODE and features a built-in DIODE, making it ideal for high-power switching circuits.
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FCPF067N65S3
FCPF067N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 110A and EAS of 214mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.067 ohm RDS(on) and can handle up to 46W power dissipation.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
FCPF190N60E
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; No. of Elements: 1; JESD-609 Code: e3;
FCPF190N60
FCPF190N60 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has 20.2A Max Drain Current, 0.199 ohm RDS(on), and 400mJ Avalanche Energy Rating. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C temperature.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; Transistor Element Material: SILICON; JESD-609 Code: e3;
FCPF290N80
FCPF290N80 by Onsemi is a Power FET with 800V DS breakdown voltage, 42A IDM, and 0.29 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features N-channel type, single configuration with built-in diode, and metal-oxide semiconductor technology.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 42 A; Package Shape: RECTANGULAR;
FCPF190N60E-F152
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; No. of Terminals: 3; Avalanche Energy Rating (EAS): 400 mJ;
FCPF190N60E_F152
Fairchild Semiconductor FCPF190N60E_F152 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 61.8A IDM, 0.19 ohm RDS(on), and 400mJ EAS. Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Operating Temp: 150°C.
FCPF600N65S3R0L-F154
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; No. of Elements: 1; No. of Terminals: 3;
FCPF11N60T
FCPF11N60T by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max ID of 11A, 0.38 ohm Drain-Source Resistance, and an EAS of 340mJ. This METAL-OXIDE SEMICONDUCTOR transistor operates in ENHANCEMENT MODE at up to 150°C temperature.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
FCPF11N60F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FCPF11N60F by Onsemi is a N-CHANNEL power FET with a min DS breakdown voltage of 600V. It has a max pulsed drain current of 33A and an avalanche energy rating of 340mJ. This transistor is commonly used for switching applications.
FCPF11N60NT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32.1 W; JEDEC-95 Code: TO-220AB; Terminal Finish: MATTE TIN;
FCPF11N60NT by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 32.4A IDM and 0.299 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 32.1W and can handle up to 150°C temperature.
FCPF190N60E-F154
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 400 mJ;
FCPF22N60NT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; Minimum DS Breakdown Voltage: 600 V; Maximum Pulsed Drain Current (IDM): 66 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 672 mJ;
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