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ESD5482MUT5G

Onsemi

ESD5482MUT5G by Onsemi

ESD5482MUT5G by Onsemi is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 3.3V max repetitive peak reverse voltage and 7.8V clamping voltage. It's ideal for transient suppression in surface mount applications, offering avalanche technology and nickel palladium gold terminal finish.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 12,840 parts In-Stock

1+ parts

$0.833

100+ parts

$0.221

1k+ parts

$0.136

10k+ parts

-

12,840

$0.833

$0.221

$0.136

-

Rochester

USA . 2,922,517 parts In-Stock

1+ parts

-

100+ parts

$0.095

1k+ parts

$0.079

10k+ parts

$0.070

2,922,517

-

$0.095

$0.079

$0.070

DigiKey

USA . 2,922,517 parts In-Stock

1+ parts

-

100+ parts

-

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$0.120

2,922,517

-

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-

$0.120

Verical

USA . 2,922,517 parts In-Stock

1+ parts

-

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$0.088

2,922,517

-

-

-

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,923 parts In-Stock

1+ parts

$0.072

100+ parts

-

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1,923

$0.072

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Chip Stock

USA . 59,000 parts In-Stock

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59,000

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Ashlea Components Ltd

UK . 14,700 parts In-Stock

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14,700

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Vyrian

USA . 4,829 parts In-Stock

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4,829

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,345 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

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2,345

$0.068

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-

-

Component Stockers USA

USA . 3,867,466 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

3,867,466

$0.080

$0.070

$0.070

$0.070

Corohmni

South Africa . 98 parts In-Stock

1+ parts

$0.080

100+ parts

-

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98

$0.080

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Native Components

USA . 990 parts In-Stock

1+ parts

$7.160

100+ parts

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990

$7.160

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AZTECH Wire

Italy . 106 parts In-Stock

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$15.190

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106

$15.190

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Continental Prestige Electronics

USA . 2,922,517 parts In-Stock

1+ parts

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$0.109

2,922,517

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$0.109

Perfect Parts

USA . 105,004 parts In-Stock

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105,004

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Authorized Procurement Solutions

USA . 12,840 parts In-Stock

1+ parts

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12,840

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GreenTree Electronics

Israel . 12,840 parts In-Stock

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12,840

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Kulean Microsystems

USA . 4,481 parts In-Stock

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4,481

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Northwest PG Solutions

USA . 2,010 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$7.017

10k+ parts

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2,010

-

-

$7.017

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TANS Electronics

Latvia . 1,781 parts In-Stock

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1,781

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Problanco Electronics

Mexico . 1,049 parts In-Stock

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1,049

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UHIMA Technologies

Türkiye . 845 parts In-Stock

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845

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SupplyDigital Components

Austria . 69 parts In-Stock

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69

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Overview

Protect your electronics with the ESD5482MUT5G by Onsemi, a top-tier manufacturer known for its high-quality products. As a transient suppression device with surface mount capabilities, this diode offers reliable protection with a nominal breakdown voltage of 5V and maximum clamping voltage of 7.8V. Perfect for bidirectional applications, this diode is essential for safeguarding sensitive electronic components from voltage spikes. Trust in Onsemi's expertise and invest in the ESD5482MUT5G for peace of mind and long-lasting protection.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy assembly onto circuit boards, saving space and reducing installation time.

Nominal Breakdown Voltage: 5 V

Provides reliable protection by quickly diverting excess voltage above 5V away from sensitive components.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold finish ensures good conductivity and corrosion resistance for long-lasting performance.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high temperatures for up to 30 seconds during reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of up to 260 °C, ensuring reliable soldering connections.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Transient voltage suppressor diodes provide fast response to overvoltage events, protecting connected devices.

Technology: AVALANCHE

Avalanche technology allows for high energy absorption capacity and low clamping voltage for effective transient suppression.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

With a maximum reverse voltage of 3.3V, it efficiently clamps transient voltages below this level to prevent damage.

Polarity: BIDIRECTIONAL

Bidirectional design allows for protection against overvoltages in both directions, enhancing versatility in circuit applications.

Maximum Clamping Voltage: 7.8 V

Maintains clamping voltage below 7.8V, ensuring effective suppression of transient voltages and protecting connected components.

Diode Element Material: SILICON

Silicon diode element material provides stability and reliability in transient suppression applications, offering consistent performance over time.

Technical Specifications

Transient Suppression Devices ESD5482MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

7.8 V

Diode Element Material:

SILICON

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD5482MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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