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EMH2401

Onsemi

EMH2401 by Onsemi

The Onsemi EMH2401 is an N-CHANNEL Power FET with 3A max drain current and 1.2W power dissipation. It operates in enhancement mode with a max temp of 150 °C, suitable for surface mount applications in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,369 parts In-Stock

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Vyrian

USA . 1,971 parts In-Stock

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Native Components

USA . 162 parts In-Stock

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$0.909

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162

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Northwest PG Solutions

USA . 607 parts In-Stock

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$1.000

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607

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Problanco Electronics

Mexico . 8,143 parts In-Stock

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SupplyDigital Components

Austria . 6,957 parts In-Stock

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Kulean Microsystems

USA . 5,993 parts In-Stock

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TANS Electronics

Latvia . 5,497 parts In-Stock

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Corphita

USA . 1,527 parts In-Stock

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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Corohmni

South Africa . 380 parts In-Stock

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Overview

Upgrade your power systems with the EMH2401 by Onsemi, a top-quality N-CHANNEL Power FET designed to enhance performance and efficiency in a variety of applications. Manufactured by industry-leading Onsemi, this surface mount transistor offers reliable operation and a maximum drain current of 3A, making it ideal for high-power circuits. Experience improved power dissipation and temperature management with the EMH2401, ensuring seamless operation even under heavy loads. Trust Onsemi's expertise in semiconductor technology and elevate your projects with this cutting-edge FET.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are known for their high current-carrying capability, making them suitable for applications requiring high power.

Surface Mount: YES

Surface mount technology allows for easier installation and integration into circuit boards, saving space and reducing assembly time.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally off devices, providing better control over the flow of current and enabling precise switching.

Maximum Drain Current (Abs) (ID): 3 A

With a high maximum drain current rating of 3 A, this FET can handle heavy loads and high power applications without overheating or failing.

Maximum Power Dissipation (Abs): 1.2 W

The low power dissipation of 1.2 W ensures that this FET operates efficiently and does not waste energy, making it suitable for power-sensitive applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs are known for their high input impedance, low output capacitance, and reliability, making them ideal for switching and amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this FET can withstand elevated temperatures and operate reliably in harsh environmental conditions.

Technical Specifications

Power Field Effect Transistors (FET) EMH2401 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

EMH2401 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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