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CAT1021JI-28TE13

Onsemi

CAT1021JI-28TE13 by Onsemi

CAT1021JI-28TE13 by Onsemi is a Power Management IC with 3.3V nominal voltage, suitable for industrial applications. It features a small outline package style, dual terminal position, and operates b/w -40 to 85 °C. Ideal for power supply management circuits in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,857 parts In-Stock

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Digiode

USA . 1,747 parts In-Stock

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Native Components

USA . 64 parts In-Stock

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$1.926

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64

$1.926

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Northwest PG Solutions

USA . 1,359 parts In-Stock

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$2.119

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1,359

$2.119

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TANS Electronics

Latvia . 6,974 parts In-Stock

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Problanco Electronics

Mexico . 5,293 parts In-Stock

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Kulean Microsystems

USA . 3,768 parts In-Stock

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3,768

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Corphita

USA . 2,414 parts In-Stock

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UHIMA Technologies

Türkiye . 702 parts In-Stock

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702

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SupplyDigital Components

Austria . 252 parts In-Stock

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Corohmni

South Africa . 209 parts In-Stock

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Overview

Enhance the efficiency and performance of your power management systems with the CAT1021JI-28TE13 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that are ideal for a wide range of applications. With its compact size, advanced technology, and industrial-grade temperature grade, this product offers unmatched reliability and precision. Upgrade your power supply management circuits with the CAT1021JI-28TE13 and experience the value of superior craftsmanship and innovation in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal conductivity and electrical insulation, making the product reliable and durable.

Surface Mount: YES

Surface mount technology allows for more efficient assembly and space-saving on the PCB.

Nominal Supply Voltage (Vsup): 3.3 V

Suitable voltage for powering various electronic devices without risking damage.

No. of Terminals: 8

A sufficient number of terminals for connecting to different components in the circuit.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments without malfunctioning.

Minimum Operating Temperature: -40 °C

Resilient to cold temperatures, ensuring functionality in diverse conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

Allows for a wide range of input voltages, making it versatile for different applications.

Technical Specifications

Power Management ICs CAT1021JI-28TE13 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

CAT1021JI-28TE13 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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