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CAT1021JI-30TE13

Onsemi

CAT1021JI-30TE13 by Onsemi

CAT1021JI-30TE13 by Onsemi is a Power Management IC with 3.3V nominal voltage, suitable for industrial applications. It features a small outline package style, dual terminal position, and operates b/w -40 to 85 °C. Ideal for power supply management circuits in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,012 parts In-Stock

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Vyrian

USA . 1,446 parts In-Stock

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TANS Electronics

Latvia . 8,345 parts In-Stock

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Kulean Microsystems

USA . 6,177 parts In-Stock

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Problanco Electronics

Mexico . 4,306 parts In-Stock

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SupplyDigital Components

Austria . 3,441 parts In-Stock

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Northwest PG Solutions

USA . 1,353 parts In-Stock

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Corphita

USA . 1,337 parts In-Stock

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Native Components

USA . 549 parts In-Stock

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Corohmni

South Africa . 269 parts In-Stock

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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Overview

Enhance your power management solutions with the CAT1021JI-30TE13 by Onsemi. Crafted with precision and reliability in mind, this small outline IC offers unparalleled performance in a wide range of industrial applications. With a nominal supply voltage of 3.3V and dual terminal position, this power supply management circuit ensures optimal efficiency and functionality. Trust Onsemi's expertise in delivering top-notch quality products, and experience the value and benefits that the CAT1021JI-30TE13 brings to your projects. Choose excellence, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material is lightweight, cost-effective and provides good electrical insulation, making it a good choice for power management ICs.

Surface Mount: YES

Surface mount technology allows for efficient and compact PCB design, making the product suitable for space-constrained applications.

Nominal Supply Voltage (Vsup): 3.3 V

The nominal supply voltage of 3.3V is commonly used in many electronic devices, ensuring compatibility with a wide range of applications.

No. of Terminals: 8

Having 8 terminals allows for multiple connections and functionalities, providing versatility in power management applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures the IC can withstand elevated temperature conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the IC to operate reliably in cold environments, expanding its range of applications.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the power management circuit.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, the IC can handle a wide input voltage range, making it suitable for various power input scenarios.

Technical Specifications

Power Management ICs CAT1021JI-30TE13 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

CAT1021JI-30TE13 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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