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CAT1021JE-25TE13

Onsemi

CAT1021JE-25TE13 by Onsemi

CAT1021JE-25TE13 by Onsemi is a Power Management IC with 3-5.5V supply voltage range, -40 to 125 °C operating temperature, and CMOS technology. It is used in automotive applications for power supply management circuits due to its small outline package and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,333 parts In-Stock

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Vyrian

USA . 2,106 parts In-Stock

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Native Components

USA . 603 parts In-Stock

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$0.110

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$0.105

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$0.105

Northwest PG Solutions

USA . 1,478 parts In-Stock

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$0.121

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$0.107

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$0.107

Problanco Electronics

Mexico . 8,206 parts In-Stock

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TANS Electronics

Latvia . 7,443 parts In-Stock

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Kulean Microsystems

USA . 6,743 parts In-Stock

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Corphita

USA . 2,379 parts In-Stock

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SupplyDigital Components

Austria . 1,574 parts In-Stock

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Corohmni

South Africa . 418 parts In-Stock

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UHIMA Technologies

Türkiye . 281 parts In-Stock

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Overview

Experience the power of reliable and efficient power management with the CAT1021JE-25TE13 by Onsemi. Crafted with precision and expertise, Onsemi's Power Management ICs are designed to provide optimal performance in a variety of applications. From automotive systems to consumer electronics, this small outline package delivers high-quality power supply management circuitry for seamless integration. Trust Onsemi to deliver innovative solutions that enhance your products and offer unmatched value to customers. Choose the CAT1021JE-25TE13 for superior performance and reliability in every use case.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides good insulation properties for safety and reliability.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards.

Nominal Supply Voltage (Vsup): 3 V

Suitable for low-power applications and compatible with many devices.

Package Style: SMALL OUTLINE

Compact size saves space on the PCB and reduces overall device footprint.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Maximum Supply Voltage (Vsup): 5.5 V

Allows for a flexible range of input voltages for different applications.

Technical Specifications

Power Management ICs CAT1021JE-25TE13 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

CAT1021JE-25TE13 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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