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BR261W30A101E1G

Onsemi

BR261W30A101E1G by Onsemi

BR261W30A101E1G by Onsemi is a consumer IC with 30 terminals in a grid array package. It operates b/w -40 to 85 °C, suitable for industrial applications. With a very thin profile and fine pitch, it supports supply voltages from 1.8V to 3.63V, making it ideal for compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,924 parts In-Stock

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Digiode

USA . 1,455 parts In-Stock

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1,455

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Distributors (Availability)

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Advanced Electronics

New Zealand . 92 parts In-Stock

1+ parts

$0.424

100+ parts

$0.386

1k+ parts

$0.348

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92

$0.424

$0.386

$0.348

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Corohmni

South Africa . 139 parts In-Stock

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$2.854

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Component Stockers USA

USA . 708 parts In-Stock

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$99.990

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708

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SupplyDigital Components

Austria . 6,710 parts In-Stock

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TANS Electronics

Latvia . 5,117 parts In-Stock

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Corphita

USA . 1,729 parts In-Stock

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Microchip USA

USA . 1,145 parts In-Stock

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Native Components

USA . 774 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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476

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Problanco Electronics

Mexico . 448 parts In-Stock

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448

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Northwest PG Solutions

USA . 362 parts In-Stock

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Kulean Microsystems

USA . 41 parts In-Stock

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Overview

Discover the BR261W30A101E1G by Onsemi, a cutting-edge consumer circuit IC that offers unparalleled quality and reliability. With a sleek rectangular package design and advanced grid array technology, this innovative product is perfect for a wide range of applications. From industrial to consumer electronics, this versatile IC provides superior performance and efficiency, ensuring seamless operation in any environment. Trust Onsemi's expertise in semiconductor manufacturing to deliver a high-quality solution that exceeds expectations. Experience the value and benefits of the BR261W30A101E1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IC, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation onto PCBs, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

Simplifies the design and layout of the IC on the circuit board, improving overall efficiency.

General IC Type: CONSUMER CIRCUIT

Designed specifically for consumer electronics applications, making it a reliable choice for various devices.

No. of Terminals: 30

Provides ample connectivity options for interfacing with other components in the system.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Offers a compact and high-density packaging solution, saving valuable board space and enabling finer pitch connections.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even under high temperature conditions, enhancing the overall stability of the device.

Minimum Operating Temperature: -40 °C

Capable of functioning in cold environments, providing flexibility in usage scenarios.

Terminal Position: BOTTOM

Facilitates easy soldering and mounting processes during assembly.

Maximum Seated Height: 1 mm

Allows for a low-profile design, ideal for space-constrained applications.

Width: 2.233 mm

Compact size enables integration into smaller devices without compromising on performance.

Minimum Supply Voltage (Vsup): 1.8 V

Operates efficiently even at low voltage levels, conserving power and extending battery life.

Length: 2.388 mm

Optimal dimensions for fitting into various electronic devices, ensuring compatibility and versatility.

Temperature Grade: INDUSTRIAL

Suitable for industrial environments where ruggedness and reliability are essential.

Terminal Form: BALL

Facilitates accurate and reliable connections with other components, ensuring signal integrity.

Maximum Supply Voltage (Vsup): 3.63 V

Supports higher voltage input for increased performance capabilities, suitable for a wide range of applications.

Technical Specifications

Other Function Consumer ICs BR261W30A101E1G attributes and parameters. Explore more Other Function Consumer ICs devices from Onsemi

Specs

General IC Type:

JESD-30 Code:

R-PBGA-B30

Length:

2.388 mm

No. of Functions:

1

No. of Terminals:

30

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.63 V

Minimum Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2.233 mm

Trade Compliance

BR261W30A101E1G General Purpose ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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