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BD238STU

Onsemi

BD238STU by Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 2 A;

Median Price

$0.444

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,142 parts In-Stock

1+ parts

$0.210

100+ parts

$0.210

1k+ parts

$0.200

10k+ parts

-

8,142

$0.210

$0.210

$0.200

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Farnell

UK . 490 parts In-Stock

1+ parts

$0.444

100+ parts

$0.237

1k+ parts

$0.189

10k+ parts

$0.160

490

$0.444

$0.237

$0.189

$0.160

Element14

Singapore . 490 parts In-Stock

1+ parts

$0.876

100+ parts

$0.467

1k+ parts

$0.373

10k+ parts

$0.303

490

$0.876

$0.467

$0.373

$0.303

Distributors (In-Stock)

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Nova Conductors

Japan . 42 parts In-Stock

1+ parts

$0.192

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-

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42

$0.192

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Digiode

USA . 3,085 parts In-Stock

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3,085

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Vyrian

USA . 716 parts In-Stock

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QIE Inc.

USA . 597 parts In-Stock

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597

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LIBRA Elektronik GmbH

Germany . 50 parts In-Stock

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50

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VNN

France . 9 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 184 parts In-Stock

1+ parts

$0.188

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184

$0.188

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.192

100+ parts

-

1k+ parts

$0.182

10k+ parts

$0.179

1,000

$0.192

-

$0.182

$0.179

AZTECH Wire

Italy . 716 parts In-Stock

1+ parts

$14.721

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716

$14.721

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Ampacity Inc.

Singapore . 605 parts In-Stock

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$42.050

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605

$42.050

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Component Stockers USA

USA . 209 parts In-Stock

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$99.990

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209

$99.990

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Perfect Parts

USA . 23,654 parts In-Stock

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23,654

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Kulean Microsystems

USA . 6,713 parts In-Stock

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TANS Electronics

Latvia . 4,009 parts In-Stock

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SupplyDigital Components

Austria . 1,485 parts In-Stock

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Corphita

USA . 1,387 parts In-Stock

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1,387

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Problanco Electronics

Mexico . 795 parts In-Stock

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795

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Supply Digital

USA . 641 parts In-Stock

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641

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UHIMA Technologies

Türkiye . 509 parts In-Stock

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509

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Technical Specifications

Power Bipolar Junction Transistors (BJT) BD238STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD238STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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