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BD237G

Onsemi

BD237G by Onsemi

The Onsemi BD237G is a NPN BJT transistor with 80V VCE, 2A IC, and 25W Ptot. Ideal for amplifier applications, it has hFE of 25, fT of 3MHz, and can operate up to 150°C. Packaged in PLASTIC/EPOXY with THROUGH-HOLE terminals, it's designed for high-power amplification tasks.

Median Price

$0.526

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.468

100+ parts

$0.468

1k+ parts

$0.468

10k+ parts

-

50

$0.468

$0.468

$0.468

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Arrow

USA . 1 parts In-Stock

1+ parts

$0.526

100+ parts

$0.389

1k+ parts

$0.304

10k+ parts

$0.279

1

$0.526

$0.389

$0.304

$0.279

Farnell

UK . 1,299 parts In-Stock

1+ parts

$1.049

100+ parts

$0.626

1k+ parts

$0.391

10k+ parts

$0.330

1,299

$1.049

$0.626

$0.391

$0.330

DigiKey

USA . 1,240 parts In-Stock

1+ parts

$1.310

100+ parts

$0.543

1k+ parts

$0.385

10k+ parts

$0.295

1,240

$1.310

$0.543

$0.385

$0.295

Mouser Electronics

USA . 1,116 parts In-Stock

1+ parts

$1.310

100+ parts

$0.543

1k+ parts

$0.381

10k+ parts

$0.333

1,116

$1.310

$0.543

$0.381

$0.333

Newark

USA . 2,438 parts In-Stock

1+ parts

$1.440

100+ parts

$0.668

1k+ parts

$0.506

10k+ parts

$0.458

2,438

$1.440

$0.668

$0.506

$0.458

Element14

Singapore . 2,638 parts In-Stock

1+ parts

$1.910

100+ parts

$0.802

1k+ parts

$0.482

10k+ parts

$0.473

2,638

$1.910

$0.802

$0.482

$0.473

Verical

USA . 4,500 parts In-Stock

1+ parts

-

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-

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$0.293

10k+ parts

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4,500

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-

$0.293

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Chip1Stop

Japan . 1,001 parts In-Stock

1+ parts

-

100+ parts

$0.516

1k+ parts

$0.346

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1,001

-

$0.516

$0.346

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RS (Exports)

UK . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.397

10k+ parts

$0.323

800

-

-

$0.397

$0.323

EBV Elektronik

Germany . 500 parts In-Stock

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500

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Rochester

USA . 239 parts In-Stock

1+ parts

-

100+ parts

$0.396

1k+ parts

$0.328

10k+ parts

$0.293

239

-

$0.396

$0.328

$0.293

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,528 parts In-Stock

1+ parts

$0.308

100+ parts

-

1k+ parts

-

10k+ parts

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1,528

$0.308

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.459

100+ parts

-

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-

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10

$0.459

-

-

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TME

Poland . 473 parts In-Stock

1+ parts

$1.200

100+ parts

$0.526

1k+ parts

$0.386

10k+ parts

$0.370

473

$1.200

$0.526

$0.386

$0.370

VNN

France . 29,417 parts In-Stock

1+ parts

-

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29,417

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Flip Electronics

USA . 10,000 parts In-Stock

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IBS Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.484

1k+ parts

$0.456

10k+ parts

$0.435

4,000

-

$0.484

$0.456

$0.435

Vyrian

USA . 908 parts In-Stock

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908

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NAC Semi

USA . 500 parts In-Stock

1+ parts

-

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1k+ parts

$1.650

10k+ parts

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500

-

-

$1.650

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LIBRA Elektronik GmbH

Germany . 305 parts In-Stock

1+ parts

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305

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ComSIT Distribution GmbH

Germany . 180 parts In-Stock

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180

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ComSIT USA

USA . 180 parts In-Stock

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180

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EMSNET

USA . 128 parts In-Stock

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128

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,195 parts In-Stock

1+ parts

$0.258

100+ parts

$0.252

1k+ parts

$0.250

10k+ parts

-

1,195

$0.258

$0.252

$0.250

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Corphita

USA . 2,412 parts In-Stock

1+ parts

$0.292

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2,412

$0.292

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Corohmni

South Africa . 187 parts In-Stock

1+ parts

$0.317

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187

$0.317

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Continental Prestige Electronics

USA . 2,409 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

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10k+ parts

$0.436

2,409

$0.444

-

-

$0.436

Argo Parts USA

USA . 907 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

-

10k+ parts

$0.431

907

$0.444

-

-

$0.431

Aztec Data Supply Inc.

USA . 2,560 parts In-Stock

1+ parts

$0.459

100+ parts

-

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-

10k+ parts

-

2,560

$0.459

-

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.468

100+ parts

$0.468

1k+ parts

$0.468

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-

50

$0.468

$0.468

$0.468

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Ampacity Inc.

Singapore . 1,150 parts In-Stock

1+ parts

$0.560

100+ parts

-

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1,150

$0.560

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Perfect Parts

USA . 37,662 parts In-Stock

1+ parts

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37,662

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Kepictronics

USA . 15,000 parts In-Stock

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Kulean Microsystems

USA . 7,480 parts In-Stock

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7,480

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SupplyDigital Components

Austria . 6,204 parts In-Stock

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6,204

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A-Z Elektronik GmbH

Germany . 5,102 parts In-Stock

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5,102

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Lixinc

USA . 4,617 parts In-Stock

1+ parts

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4,617

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RC Electronics

USA . 4,320 parts In-Stock

1+ parts

-

100+ parts

$0.470

1k+ parts

$0.440

10k+ parts

$0.430

4,320

-

$0.470

$0.440

$0.430

Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

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3,700

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TANS Electronics

Latvia . 2,930 parts In-Stock

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2,930

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Problanco Electronics

Mexico . 1,624 parts In-Stock

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1,624

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UHIMA Technologies

Türkiye . 596 parts In-Stock

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596

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.450

1k+ parts

$0.436

10k+ parts

$0.427

500

-

$0.450

$0.436

$0.427

ChipstoGo Electronic ltd

UK . 300 parts In-Stock

1+ parts

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300

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Computer Components Inc. - USA

USA . 207 parts In-Stock

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207

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Assy Fe

Spain . 37 parts In-Stock

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37

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Authorized Procurement Solutions

USA . 17 parts In-Stock

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17

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Overview

Upgrade your electronics with the high-quality BD237G Power Bipolar Junction Transistor by Onsemi. Manufactured with precision and expertise, this NPN transistor is ideal for amplifier applications. With a maximum power dissipation of 25W and a maximum collector current of 2A, this transistor offers reliable performance under various conditions. Whether you're a hobbyist or a professional, the BD237G provides value, efficiency, and durability. Trust Onsemi for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, perfect for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration with other components, making this transistor versatile and widely compatible.

Configuration: SINGLE

Single configuration simplifies the circuit design, making this transistor easy to use for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier use, ensuring optimal performance and reliable amplification of signals.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and space-saving installation in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering for hassle-free installation.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections, making this transistor suitable for a variety of amplifier designs.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation capacity of 25W, this transistor can handle heavy loads and operate efficiently.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mechanical mounting and heat dissipation for reliable performance in amplifier circuits.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures stable and consistent amplification of input signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating of 80V ensures safe operation and protection of the transistor in high-voltage applications.

Transistor Element Material: SILICON

Silicon transistor element material provides high-performance characteristics, ensuring reliable operation and longevity.

Maximum Collector Current (IC): 2 A

A maximum collector current of 2A allows for high current amplification, making this transistor ideal for power amplifier circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-lasting connections in electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections, making installation and troubleshooting easier.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3MHz, this transistor allows for fast switching speeds and efficient signal amplification in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD237G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD237G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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