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74HCT04DTR2G

Onsemi

74HCT04DTR2G by Onsemi

74HCT04DTR2G by Onsemi is a logic gate with 6 functions, operating at a supply voltage of 5V. It has a propagation delay of 26ns and can handle load capacitance up to 50pF. This CMOS technology device is suitable for military-grade applications due to its wide temperature range and small form factor.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 113,775 parts In-Stock

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-

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$0.119

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$0.099

10k+ parts

$0.088

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$0.119

$0.099

$0.088

Verical

USA . 87,421 parts In-Stock

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$0.110

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$0.110

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Nova Conductors

Japan . 34 parts In-Stock

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$0.087

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Digiode

USA . 252 parts In-Stock

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$0.093

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Vyrian

USA . 6,486 parts In-Stock

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VNN

France . 4,522 parts In-Stock

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Prism Electronics

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Ampacity Inc.

Singapore . 113,299 parts In-Stock

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$0.083

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$0.083

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Netroflash

USA . 2,000 parts In-Stock

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$0.087

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$0.085

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Argo Parts USA

USA . 1,667 parts In-Stock

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$0.087

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$0.084

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Continental Prestige Electronics

USA . 592 parts In-Stock

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Corphita

USA . 1,353 parts In-Stock

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Corohmni

South Africa . 368 parts In-Stock

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$0.098

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AZTECH Wire

Italy . 521 parts In-Stock

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$12.660

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TANS Electronics

Latvia . 7,836 parts In-Stock

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Kulean Microsystems

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Kepictronics

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SupplyDigital Components

Austria . 5,258 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 1,007 parts In-Stock

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GreenTree Electronics

Israel . 768 parts In-Stock

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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Microchip USA

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Overview

Upgrade your electronic projects with the reliable 74HCT04DTR2G logic gate from Onsemi. This high-quality component boasts a fast propagation delay and low power consumption, making it ideal for a wide range of applications. Whether you're designing consumer electronics or industrial machinery, this logic gate offers unmatched performance and efficiency. Trust in Onsemi's reputation for excellence and invest in the 74HCT04DTR2G for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product a reliable choice for long-term use.

Propagation Delay At Nominal Supply: 26 ns

The low propagation delay ensures quick processing of signals, making the product suitable for high-speed applications.

Surface Mount: YES

Surface mount technology makes installation easy and efficient, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows seamless integration with other components in electronic circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates 74HCT04DTR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

26 ns

Propagation Delay (tpd):

26 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

74HCT04DTR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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