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2N5062RLRAG

Onsemi

2N5062RLRAG by Onsemi

2N5062RLRAG by Onsemi is a SCR with max DC gate trigger current of 0.2mA, non-repetitive peak on-state current of 10A, and max on-state current of 0.51A. It is used in applications requiring reliable switching capabilities at temperatures ranging from -40 to 110 °C.

Median Price

$0.198

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,092 parts In-Stock

1+ parts

-

100+ parts

$0.198

1k+ parts

$0.164

10k+ parts

$0.147

2,092

-

$0.198

$0.164

$0.147

DigiKey

USA . 2,092 parts In-Stock

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-

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$0.250

2,092

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$0.250

Verical

USA . 2,092 parts In-Stock

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$0.183

2,092

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$0.183

Distributors (In-Stock)

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Digiode

USA . 1,182 parts In-Stock

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$0.155

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1,182

$0.155

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Vyrian

USA . 923 parts In-Stock

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$0.163

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923

$0.163

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TEDSS.com

USA . 867 parts In-Stock

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$0.200

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$0.100

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867

$0.200

$0.100

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DigiKey Marketplace

USA . 6,561 parts In-Stock

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Pegasus Components GmbH

Germany . 3,100 parts In-Stock

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3,100

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LIBRA Elektronik GmbH

Germany . 1,900 parts In-Stock

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1,900

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Q Components

USA . 1,500 parts In-Stock

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1,500

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EMSNET

USA . 1,298 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 656 parts In-Stock

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$0.147

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656

$0.147

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Corohmni

South Africa . 395 parts In-Stock

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$0.163

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395

$0.163

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Native Components

USA . 620 parts In-Stock

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$1.805

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620

$1.805

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Northwest PG Solutions

USA . 1,522 parts In-Stock

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$1.985

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1,522

$1.985

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Perfect Parts

USA . 21,743 parts In-Stock

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Kulean Microsystems

USA . 8,181 parts In-Stock

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Continental Prestige Electronics

USA . 6,561 parts In-Stock

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$0.139

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6,561

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$0.139

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SupplyDigital Components

Austria . 5,904 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,845 parts In-Stock

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4,845

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Kepictronics

USA . 4,725 parts In-Stock

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4,725

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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TANS Electronics

Latvia . 3,254 parts In-Stock

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Metaverse IC Inc.

Canada . 1,800 parts In-Stock

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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108

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Problanco Electronics

Mexico . 28 parts In-Stock

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Overview

Enhance your electronic projects with the reliable 2N5062RLRAG by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality Silicon Controlled Rectifiers like this one, offering superior performance and durability. Ideal for various applications, this SCR ensures smooth operation and efficient power control. Experience the value and benefits of this product firsthand, providing you with the advantage you need to succeed in your projects. Trust Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the SCR, making it suitable for various industrial applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient control of the SCR, ensuring reliable operation.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the SCR easy to integrate into different systems.

Non Repetitive Peak On-state Current: 10 A

High peak on-state current capacity allows the SCR to handle heavy loads, making it suitable for high-power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals allow for easy and secure mounting of the SCR onto a PCB or other electronic assembly.

Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating ensures the SCR can withstand voltage spikes and reverse polarity conditions without getting damaged.

Maximum Operating Temperature: 110 °C

High operating temperature range enables the SCR to operate reliably in harsh environments without overheating.

Trigger Device Type: SCR

Being an SCR, this device offers precise and reliable switching characteristics, making it ideal for power control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5062RLRAG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

30 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5062RLRAG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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