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1PMT5934BT1G

Onsemi

1PMT5934BT1G by Onsemi

1PMT5934BT1G by Onsemi is a Zener diode with a nominal reference voltage of 24V and max power dissipation of 0.5W. It operates at a max temperature of 150 °C, has a working test current of 15.6mA, and features a small outline package style for surface mount applications.

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Lifecycle Status

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1k+

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Vyrian

USA . 6,267 parts In-Stock

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AZTECH Wire

Italy . 877 parts In-Stock

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$8.520

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Kulean Microsystems

USA . 7,114 parts In-Stock

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TANS Electronics

Latvia . 5,163 parts In-Stock

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SupplyDigital Components

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Northwest PG Solutions

USA . 2,004 parts In-Stock

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Problanco Electronics

Mexico . 1,975 parts In-Stock

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UHIMA Technologies

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Native Components

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Corphita

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Overview

Upgrade your electronic designs with the 1PMT5934BT1G Zener Diode by Onsemi. Manufactured with top-quality materials and advanced technology, this single-config Zener diode offers reliable performance with a maximum voltage tolerance of 5%. Perfect for applications requiring precise voltage regulation, such as power supplies and signal conditioning circuits, this diode ensures stable operation at temperatures up to 150 °C. Discover the value and benefits of using the 1PMT5934BT1G in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for a variety of applications.

Working Test Current: 15.6 mA

The high working test current allows for reliable performance and ensures the diode can handle a range of electrical loads.

Surface Mount: YES

The surface mount capability makes installation and handling of the diode much easier, especially in compact spaces.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions without compromising its performance.

Diode Type: ZENER DIODE

Being a Zener diode, this product is ideal for voltage regulation and protection circuits, offering precise and stable voltage references.

Nominal Reference Voltage: 24 V

The specific reference voltage of 24 V makes this diode suitable for applications requiring this voltage level, providing accurate regulation.

Technical Specifications

Zener Diodes 1PMT5934BT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

19 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

24 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

15.6 mA

Trade Compliance

1PMT5934BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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