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1PMT5930BT1G

Onsemi

1PMT5930BT1G by Onsemi

1PMT5930BT1G by Onsemi is a Zener diode with 16V nominal voltage, 5% tolerance, and 10 ohm impedance. It operates at up to 150 °C, suitable for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,109 parts In-Stock

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Digiode

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Native Components

USA . 468 parts In-Stock

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$0.876

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Northwest PG Solutions

USA . 1,063 parts In-Stock

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AZTECH Wire

Italy . 841 parts In-Stock

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$12.890

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Component Stockers USA

USA . 549 parts In-Stock

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Kepictronics

USA . 61,000 parts In-Stock

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TANS Electronics

Latvia . 8,386 parts In-Stock

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SupplyDigital Components

Austria . 7,098 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 3,911 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 254 parts In-Stock

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Corohmni

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Overview

Discover the power of precision with the Onsemi 1PMT5930BT1G Zener Diode. Manufactured by industry leader Onsemi, this diode offers unmatched quality and reliability. Ideal for a variety of applications, this diode provides precise voltage regulation and protection in a compact package. With a maximum voltage tolerance of 5% and a nominal reference voltage of 16V, this diode ensures consistent performance. Trust Onsemi for all your Zener diode needs and experience the value and benefits that this product brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the zener diode, making it resistant to environmental factors and mechanical stress.

Working Test Current: 23.4 mA

The higher working test current ensures stable performance and reliability when the zener diode is in operation.

Surface Mount: YES

Being surface mountable makes this zener diode easy to install on PCBs, saving space and simplifying assembly processes.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures accurate and consistent voltage regulation, making this zener diode suitable for precision applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this zener diode can handle elevated temperatures without compromising its performance.

Maximum Power Dissipation: 0.5 W

The maximum power dissipation of 0.5W allows the zener diode to handle higher power levels, making it suitable for applications that require efficient power management.

Nominal Reference Voltage: 16 V

With a nominal reference voltage of 16V, this zener diode provides stable voltage regulation at the specified value, making it ideal for voltage reference applications.

Technical Specifications

Zener Diodes 1PMT5930BT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

16 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

23.4 mA

Trade Compliance

1PMT5930BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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