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1PMT5925BT1G

Onsemi

1PMT5925BT1G by Onsemi

1PMT5925BT1G by Onsemi is a Zener diode with 10V nominal reference voltage, 37.5mA test current, and 4.5 ohm dynamic impedance. Ideal for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,818 parts In-Stock

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Digiode

USA . 310 parts In-Stock

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AZTECH Wire

Italy . 39 parts In-Stock

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$18.900

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Kulean Microsystems

USA . 6,490 parts In-Stock

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Problanco Electronics

Mexico . 2,690 parts In-Stock

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TANS Electronics

Latvia . 1,941 parts In-Stock

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Corphita

USA . 1,503 parts In-Stock

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SupplyDigital Components

Austria . 1,431 parts In-Stock

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UHIMA Technologies

Türkiye . 924 parts In-Stock

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Northwest PG Solutions

USA . 371 parts In-Stock

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Native Components

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Corohmni

South Africa . 229 parts In-Stock

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Overview

Discover the power of the 1PMT5925BT1G Zener Diode by Onsemi - a top-quality product known for its reliability and precision. With a maximum voltage tolerance of 5.05% and a nominal reference voltage of 10V, this diode is perfect for a wide range of applications. Whether you're working on electronics, telecommunications, or automotive projects, this Zener diode offers superior performance and efficiency. Trust Onsemi's expertise in semiconductor manufacturing and technology to deliver a product that meets your needs and exceeds your expectations. Experience the value and benefits of the 1PMT5925BT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the Zener diode easy to handle and resistant to physical damage.

Working Test Current: 37.5 mA

The high working test current allows for reliable and consistent performance in a variety of circuit applications.

Surface Mount: YES

Being surface mountable makes it easy to integrate into compact circuit designs, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this Zener diode can withstand harsh environmental conditions without compromising performance.

Maximum Power Dissipation: 0.5 W

The high power dissipation capability ensures that the Zener diode can handle heavy loads and prevent overheating.

Diode Type: ZENER DIODE

As a Zener diode, it provides a stable reference voltage, making it ideal for voltage regulation and protection circuits.

Nominal Reference Voltage: 10 V

The 10V nominal reference voltage is commonly used in many electronic circuits, making this Zener diode versatile and widely compatible.

Technical Specifications

Zener Diodes 1PMT5925BT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

4.5 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.05 %

Working Test Current:

37.5 mA

Trade Compliance

1PMT5925BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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