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SE556-1F

NXP Semiconductors

SE556-1F by NXP Semiconductors

SE556-1F by NXP Semiconductors is a dual-function analog waveform generator with a max output frequency of 0.5 GHz. It operates in extreme temps from -55 °C to 125 °C and features a ceramic, glass-sealed package. Ideal for military applications, it supports supply voltages from 4.5V to 18V.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Digiode

USA . 4,542 parts In-Stock

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Vyrian

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Anansix

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Prism Electronics

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Mil-Aero Solutions, Inc.

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One Stop Electronics

USA . 785 parts In-Stock

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UNI Independent Distributors

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Corphita

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Overview

Elevate your projects with the SE556-1F from NXP Semiconductors, a leader in innovative analog waveform generation. Designed for reliability and precision, this robust ceramic and glass-sealed component excels in demanding military applications. With dual functions and a wide temperature range, it ensures optimal performance under extreme conditions. Choose the SE556-1F for exceptional quality and versatility, empowering your designs with unmatched efficiency and longevity.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package provides excellent durability, thermal stability, and resistance to environmental factors, making it suitable for harsh operating conditions.

No. of Functions: 2

Having two functions allows for versatility in applications, enabling designers to save space and reduce component count in their systems.

Package Shape: RECTANGULAR

The rectangular package shape is designed for efficient PCB layout, aiding in compact designs and minimizing signal interference.

Maximum Output Frequency: 0.5 GHz

Capability of generating signals up to 0.5 GHz allows this product to meet the demands of high frequency applications, suitable for advanced communication and radar systems.

No. of Terminals: 14

The 14-terminal configuration offers ample connectivity options, simplifying integration into various circuits and enhancing connection reliability.

Package Style (Meter): IN-LINE

In-line package style is advantageous for easy connection in automated assembly processes, improving manufacturing efficiency.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability and operation even in extreme environmental conditions, making it suitable for military applications.

Minimum Operating Temperature: -55 °C

Withstanding temperatures down to -55 °C means this device can function in very low-temperature environments, perfect for aerospace and military use.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layout and optimized placement in densely populated circuit boards.

Maximum Seated Height: 5.08 mm

A maximum seated height of 5.08 mm ensures a low profile design, contributing to compact system integration.

Width: 7.62 mm

With a compact width, this device can fit into space-constrained designs without compromising performance.

Other IC type: PULSE

Designed as a pulse-type IC, it is suitable for applications requiring precise timing and control, enhancing the performance of digital circuits.

Minimum Supply Voltage (Vsup): 4.5 V

The low minimum supply voltage allows for operation in battery-powered devices, increasing energy efficiency and extending battery life.

Length: 19.535 mm

The specified length supports ease of integration into various form factors, making it ideal for a wide range of applications.

Temperature Grade: MILITARY

The military temperature grade ensures that the product meets stringent reliability standards, making it ideal for defense and aerospace applications.

Maximum Supply Current (Isup): 24 mA

With a maximum supply current of 24 mA, it provides considerable output power while maintaining energy efficiency.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enhances mechanical strength and electrical connection reliability, especially in demanding applications.

Terminal Pitch: 2.54 mm

A 2.54 mm terminal pitch allows for easy PCB design and component placement, ensuring compatibility with standard layouts.

Maximum Supply Voltage (Vsup): 18 V

A maximum supply voltage of 18 V gives designers flexibility in application design while ensuring robust performance.

Technical Specifications

Analog Waveform Generation SE556-1F attributes and parameters. Explore more Analog Waveform Generation devices from NXP Semiconductors

Specs

Other IC type:

JESD-30 Code:

R-GDIP-T14

Length:

19.535 mm

No. of Functions:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Frequency:

.5 GHz

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Current (Isup):

24 mA

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

4.5 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

SE556-1F Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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