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PZM5.1NB3,115

NXP Semiconductors

PZM5.1NB3,115 by NXP Semiconductors

PZM5.1NB3,115 by NXP Semiconductors is a Zener diode with a nominal reference voltage of 5.1V and max reverse current of 3uA. It operates at a max temperature of 150°C, making it suitable for applications requiring precise voltage regulation in compact electronic devices. With a small outline package style and gull wing terminal form, it is ideal for surface mount PCB designs where space is limited.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Anansix

USA . 1,913 parts In-Stock

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Digiode

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Nova Conductors

Japan . 600 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 313 parts In-Stock

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$0.010

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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AZTECH Wire

Italy . 6,642 parts In-Stock

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Corphita

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Supply Digital

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Microchip USA

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Bastille Electronics

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Overview

Enhance your electronic projects with the PZM5.1NB3,115 Zener Diode by NXP Semiconductors. Known for their superior quality and reliability, NXP Semiconductors delivers cutting-edge technology in a compact package. Ideal for voltage regulation and transient suppression applications, this Zener diode provides precise voltage control and protection against voltage spikes. With a low reverse current and high voltage tolerance, the PZM5.1NB3,115 guarantees optimal performance and durability. Upgrade your designs with the trusted brand and exceptional performance of NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 5 mA

The 5 mA working test current allows for reliable performance in various circuits and applications.

Surface Mount: YES

Being surface mountable makes the diode easy to install and saves space on the PCB.

Maximum Reverse Current: 3 uA

The low maximum reverse current ensures efficiency and minimizes power loss in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can function in a wide range of environments without overheating.

Nominal Reference Voltage: 5.1 V

The 5.1 V nominal reference voltage is ideal for voltage regulation and stabilization in electronic circuits.

Technical Specifications

Zener Diodes PZM5.1NB3,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Maximum Reverse Current:

3 uA

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

0 mV/Cel

Maximum Voltage Tolerance:

2.19 %

Working Test Current:

5 mA

Trade Compliance

PZM5.1NB3,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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