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PZM5.1NB2A

NXP Semiconductors

PZM5.1NB2A by NXP Semiconductors

PZM5.1NB2A by NXP Semiconductors is a Zener diode with 5.1V nominal reference voltage, 2 elements, and common anode configuration. It has a max power dissipation of 0.22W and operates at temperatures up to 150°C. Ideal for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

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Anansix

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Ampacity Inc.

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AZTECH Wire

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Overview

Discover the innovative PZM5.1NB2A Zener Diode by NXP Semiconductors, a leading manufacturer in the industry. This high-quality component offers reliable performance and precise voltage regulation for a variety of applications. With its common anode configuration and small outline package style, this diode is versatile and easy to integrate into your designs. Trust in NXP Semiconductors to provide you with a product that delivers exceptional value and efficiency, making it the perfect choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: COMMON ANODE, 2 ELEMENTS

This configuration allows for easy integration into circuits that require common anode connections, enhancing versatility.

Working Test Current: 5 mA

With a low working test current, this diode ensures efficient operation and power consumption in electronic devices.

Surface Mount: YES

The surface-mount capability makes installation and assembly convenient, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular shape offers a compact design that enables space-saving installation in tight layouts.

No. of Terminals: 3

Having multiple terminals allows for flexible connectivity options, enhancing compatibility with different circuit setups.

Package Style (Meter): SMALL OUTLINE

The small outline package style facilitates easy handling and mounting on circuit boards, contributing to efficient assembly processes.

Maximum Voltage Tolerance: 2.16%

This tight voltage tolerance ensures reliable and consistent performance, making it ideal for precision applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions, increasing its durability.

Maximum Dynamic Impedance: 40 ohm

The low dynamic impedance minimizes power losses and improves efficiency in electronic circuits.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in circuit connections, allowing for versatile component placement.

Maximum Power Dissipation: 0.22 W

The high power dissipation rating ensures stable performance under demanding conditions, making it a reliable choice for various applications.

Diode Type: ZENER DIODE

Being a Zener diode, this product provides precise voltage regulation and transient protection, making it essential for voltage-sensitive applications.

Nominal Reference Voltage: 5.1 V

The nominal reference voltage of 5.1V makes this diode suitable for voltage regulation tasks in electronic circuits.

Technology: ZENER

Utilizing Zener technology ensures consistent and reliable voltage regulation, enhancing the performance of electronic systems.

Terminal Form: GULL WING

The gull wing terminal form simplifies soldering and connection processes, ensuring secure attachment to circuit boards.

No. of Elements: 2

Having two elements enables the diode to handle higher current levels and voltages, expanding its application range.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the diode conducts current in one direction only, providing effective protection against reverse voltage transients.

Diode Element Material: SILICON

The silicon diode element material offers high reliability and performance, making it a durable choice for electronic applications.

Technical Specifications

Zener Diodes PZM5.1NB2A attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.22 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

2.16 %

Working Test Current:

5 mA

Trade Compliance

PZM5.1NB2A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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