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PZM5.1NB3

NXP Semiconductors

PZM5.1NB3 by NXP Semiconductors

The NXP Semiconductors PZM5.1NB3 is a Zener diode with a nominal reference voltage of 5.1V, max reverse current of 3uA, and working test current of 5mA. It is designed for applications requiring precise voltage regulation in small outline packages with dual terminals and gull wing terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,772 parts In-Stock

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Vyrian

USA . 692 parts In-Stock

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Anansix

USA . 315 parts In-Stock

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315

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Nova Conductors

Japan . 37 parts In-Stock

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37

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Distributors (Availability)

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Ampacity Inc.

Singapore . 996 parts In-Stock

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$2.010

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996

$2.010

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One Stop Electronics

USA . 312 parts In-Stock

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$3.010

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312

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AZTECH Wire

Italy . 692 parts In-Stock

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$8.044

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UNI Independent Distributors

Spain . 3,099 parts In-Stock

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Corphita

USA . 2,448 parts In-Stock

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Aranea Global

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Perfect Parts

USA . 129 parts In-Stock

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Overview

The PZM5.1NB3 Zener Diode by NXP Semiconductors is a high-quality component that offers reliable voltage regulation in a variety of applications. Designed with precision and expertise, this product ensures consistent performance and durability. Ideal for use in power supplies, voltage regulators, and signal conditioning circuits, the PZM5.1NB3 provides customers with an efficient and cost-effective solution for their electronic projects. Experience the benefits of superior quality and performance with NXP Semiconductors' innovative Zener Diode technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode durable and resistant to impact.

Working Test Current: 5 mA

The high working test current ensures reliable and stable performance in various applications.

Maximum Reverse Current: 3 uA

The low maximum reverse current ensures efficient operation and minimal power loss.

Maximum Voltage Tolerance: 2.19 %

The low voltage tolerance ensures accurate and precise voltage regulation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the diode to function effectively in harsh environments.

Maximum Power Dissipation: 0.3 W

The high maximum power dissipation capability ensures the diode can handle high power loads without overheating.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the diode only allows current to flow in one direction, providing reliable protection against reverse voltage.

Technical Specifications

Zener Diodes PZM5.1NB3 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Maximum Reverse Current:

3 uA

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Maximum Voltage Temperature Coefficient:

0 mV/Cel

Maximum Voltage Tolerance:

2.19 %

Working Test Current:

5 mA

Trade Compliance

PZM5.1NB3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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