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PZM5.1NB1,115

NXP Semiconductors

PZM5.1NB1,115 by NXP Semiconductors

PZM5.1NB1,115 by NXP Semiconductors is a Zener diode with a nominal reference voltage of 5.1V and max reverse current of 3uA. It has a working test current of 5mA, making it suitable for applications requiring precise voltage regulation in small outline packages. The diode operates at temperatures up to 150°C and features a unidirectional polarity with Gull Wing terminal form.

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4

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1k+

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Digiode

USA . 4,160 parts In-Stock

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Nova Conductors

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Singapore . 1,032 parts In-Stock

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$2.010

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One Stop Electronics

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AZTECH Wire

Italy . 7,533 parts In-Stock

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Supply Digital

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Overview

Enhance your electronic designs with the high-quality PZM5.1NB1,115 Zener Diode from NXP Semiconductors. With its reliable performance and precision engineering, this diode is perfect for a wide range of applications, offering protection and voltage regulation in circuits. Trust in the expertise of NXP Semiconductors to deliver top-notch components that meet your needs effortlessly. Upgrade your projects today with the PZM5.1NB1,115 and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and insulation for the diode, ensuring long-term performance and reliability.

Working Test Current: 5 mA

The 5 mA working test current allows for proper functioning of the diode in various circuits, making it versatile and compatible with different applications.

Maximum Reverse Current: 3 uA

The low maximum reverse current of 3 uA indicates high efficiency and minimal power loss in the diode, resulting in energy savings.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the diode can withstand elevated temperatures and operate reliably in challenging environments.

Maximum Power Dissipation: 0.3 W

The maximum power dissipation of 0.3 W allows the diode to handle higher power levels without overheating, enhancing its durability and performance.

Nominal Reference Voltage: 5.1 V

The 5.1 V nominal reference voltage indicates the precise voltage at which the diode operates, providing stable and accurate voltage regulation in electrical circuits.

Technical Specifications

Zener Diodes PZM5.1NB1,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Maximum Reverse Current:

3 uA

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Temperature Coefficient:

0 mV/Cel

Maximum Voltage Tolerance:

2.02 %

Working Test Current:

5 mA

Trade Compliance

PZM5.1NB1,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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