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MMSZ4702T1G

Onsemi

MMSZ4702T1G by Onsemi

MMSZ4702T1G by Onsemi is a Zener diode with a 15V nominal reference voltage, 5% max voltage tolerance, and 0.05 mA working test current. It is used in applications requiring precise voltage regulation in small outline packages for temperatures ranging from -55 to 150 °C.

Median Price

$0.023

Lifecycle Status

Suppliers In-Stock

48

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1k+

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Adafruit Industries

USA . 10 parts In-Stock

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Newark

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Mouser Electronics

USA . 20,157 parts In-Stock

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DigiKey

USA . 38,368 parts In-Stock

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Chip1Stop

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Verical

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Element14

Singapore . 14,330 parts In-Stock

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Netherlands . 90 parts In-Stock

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Digiode

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Nova Conductors

Japan . 500 parts In-Stock

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Poland . 9,692 parts In-Stock

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IBS Electronics

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South Africa . 421 parts In-Stock

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Advanced Electronics

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Semicontronic

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Continental Prestige Electronics

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Bastille Electronics

Australia . 32 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,962 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Overview

Elevate your electronic designs with the MMSZ4702T1G Zener Diode by Onsemi. With a reputation for excellence in manufacturing, Onsemi's Zener Diodes are known for their reliability and quality. This compact and versatile diode is perfect for a wide range of applications, offering precision voltage regulation and protection against voltage spikes. Trust in the value and benefits that Onsemi's MMSZ4702T1G Zener Diode brings to your projects, providing peace of mind and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good durability and protection for the zener diode, ensuring a longer lifespan and reliable performance.

Config: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to use in various applications.

Working Test Current: 0.05 mA

Low working test current helps in reducing power consumption and heat dissipation, making it energy-efficient.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving integration into circuit designs.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style aids in space-constrained applications where size is a critical factor.

Maximum Voltage Tolerance: 5 %

High maximum voltage tolerance ensures accurate and stable voltage regulation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the zener diode can function effectively in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and corrosion resistance for long-term durability.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connection and layout design.

Maximum Power Dissipation: 0.5 W

High maximum power dissipation capability allows the zener diode to handle higher power levels without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature helps in preventing thermal damage during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable soldering and secure attachment to PCB.

Diode Type: ZENER DIODE

Being a zener diode, it provides precise voltage regulation and protection in various electronic circuits.

Nominal Reference Voltage: 15 V

Nominal reference voltage of 15V offers a stable voltage reference for accurate circuit operation.

Technology: ZENER

Zener technology provides accurate voltage regulation and protection features for electronic circuits.

Terminal Form: GULL WING

Gull wing terminal form allows for easy soldering and secure mounting on the PCB.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures the zener diode conducts in only one direction, providing effective voltage regulation.

Diode Element Material: SILICON

Silicon diode element material offers good reliability and performance in various operating conditions.

Technical Specifications

Zener Diodes MMSZ4702T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

15 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

MMSZ4702T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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