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PMPB15XN,115

NXP Semiconductors

PMPB15XN,115 by NXP Semiconductors

PMPB15XN,115 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 10.4 A and operates at temperatures up to 150 °C, making it ideal for high-performance applications. Its surface mount configuration ensures easy integration into compact designs.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 52,000 parts In-Stock

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Vyrian

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Anansix

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Digiode

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Microchip USA

USA . 4,866 parts In-Stock

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$0.855

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AZTECH Wire

Italy . 9,276 parts In-Stock

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One Stop Electronics

USA . 477 parts In-Stock

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$8.050

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UNI Independent Distributors

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Corphita

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Supply Digital

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Overview

Unlock superior performance with the PMPB15XN,115 from NXP Semiconductors—a leader in innovation and reliability. This N-channel power FET is designed for efficiency, promising exceptional heat management and durability in diverse applications from automotive to consumer electronics. With its compact surface mount design, experience seamless integration and enhanced device longevity, ensuring your projects deliver unmatched quality and value every time. Embrace excellence with NXP!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and faster switching speeds, making this product ideal for high-efficiency applications.

Configuration: SINGLE

A single configuration simplifies design and reduces the footprint on PCB, making it suitable for space-constrained applications.

Surface Mount: YES

Surface mount technology allows for automated assembly and improved reliability in manufacturing processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for low power consumption in off-state and high conductivity in on-state, enhancing efficiency.

Maximum Drain Current (Abs) (ID): 10.4 A

The ability to handle a maximum drain current of 10.4 A makes this FET suitable for applications requiring substantial load handling.

Maximum Power Dissipation (Abs): 1.7 W

With a power dissipation capacity of 1.7 W, this FET can maintain performance under significant thermal stress.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and excellent switching characteristics, which are vital for modern electronic applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows this FET to operate reliably in demanding environments.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and corrosion resistance, enhancing the longevity of solder joints.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum time of 30 seconds at peak reflow temperature allows for compatibility with various PCB assembly processes.

Peak Reflow Temperature: 260 °C

Supporting a peak reflow temperature of 260 °C makes this FET suitable for high-temperature soldering processes without damage.

Technical Specifications

Power Field Effect Transistors (FET) PMPB15XN,115 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

10.4 A

Maximum Drain Current (ID):

10.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMPB15XN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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