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PMBT2222A/8,215

NXP Semiconductors

PMBT2222A/8,215 by NXP Semiconductors

PMBT2222A/8,215 by NXP Semiconductors is an NPN transistor with a single configuration. It has a max power dissipation of 0.25W, min DC current gain of 100, and max operating temp of 150°C. Ideal for applications requiring high-frequency switching in compact electronic devices.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 160,000 parts In-Stock

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Digiode

USA . 1,851 parts In-Stock

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Vyrian

USA . 639 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Anansix

USA . 72 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,283 parts In-Stock

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$0.650

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Advanced Electronics

New Zealand . 97 parts In-Stock

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$0.765

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$0.727

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$0.727

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Corohmni

South Africa . 148 parts In-Stock

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$1.351

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AZTECH Wire

Italy . 714 parts In-Stock

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$5.398

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Semicontronic

India . 777 parts In-Stock

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$34.050

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$33.199

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$33.028

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Ampacity Inc.

Singapore . 334 parts In-Stock

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$46.050

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One Stop Electronics

USA . 559 parts In-Stock

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$59.050

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Continental Prestige Electronics

USA . 6,755 parts In-Stock

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UNI Independent Distributors

Spain . 4,769 parts In-Stock

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Argo Parts USA

USA . 3,963 parts In-Stock

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Corphita

USA . 3,170 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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$56.699

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Lucentia Tech

USA . 950 parts In-Stock

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$56.699

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$56.699

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$56.699

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Bastille Electronics

Australia . 44 parts In-Stock

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Overview

Experience the superior quality and reliability of NXP Semiconductors with the PMBT2222A/8,215. This NPN transistor offers exceptional performance in a wide range of applications, from amplifiers to switching circuits. With a maximum power dissipation of 0.25 W and a minimum DC current gain of 100, this transistor delivers unmatched efficiency and stability. Trust NXP Semiconductors for innovative solutions that exceed expectations.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance.

Configuration: SINGLE

Single configuration transistors are simple and easy to use, making them suitable for a wide range of electronic applications.

Surface Mount: YES

Surface mount transistors are smaller in size, making them ideal for compact electronic devices and circuit boards.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures stable and reliable amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments and extended use.

Minimum Operating Temperature: -65 °C

The wide range of minimum operating temperature (-65°C) allows this transistor to operate effectively in cold temperature conditions.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate current levels in electronic circuits.

Nominal Transition Frequency (fT): 300 MHz

A high transition frequency of 300MHz enables this transistor to switch rapidly between on and off states, making it suitable for high frequency applications.

Technical Specifications

Other Function Transistors PMBT2222A/8,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

PMBT2222A/8,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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