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PMBT2907A/CU,215

NXP Semiconductors

PMBT2907A/CU,215 by NXP Semiconductors

NXP Semiconductors' PMBT2907A/CU,215 is a PNP transistor with max. power dissipation of 0.25W and min. DC current gain of 100. Ideal for applications requiring a single configuration, surface mount capability, and operating temperature up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,934 parts In-Stock

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Anansix

USA . 1,371 parts In-Stock

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Vyrian

USA . 1,298 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Aztec Data Supply Inc.

USA . 1,711 parts In-Stock

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$0.570

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$0.570

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Corohmni

South Africa . 794 parts In-Stock

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$0.958

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794

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.952

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$1.854

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$1.854

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500

$1.952

$1.854

$1.854

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AZTECH Wire

Italy . 665 parts In-Stock

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$9.782

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665

$9.782

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Ampacity Inc.

Singapore . 1,021 parts In-Stock

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$15.050

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$15.050

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One Stop Electronics

USA . 243 parts In-Stock

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$37.050

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243

$37.050

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Semicontronic

India . 1,282 parts In-Stock

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$63.050

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$61.474

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$61.158

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Continental Prestige Electronics

USA . 5,271 parts In-Stock

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Argo Parts USA

USA . 4,113 parts In-Stock

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Corphita

USA . 3,524 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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UNI Independent Distributors

Spain . 831 parts In-Stock

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Overview

Unleash the power of NXP Semiconductors with the PMBT2907A/CU,215 PNP transistor. Designed for maximum performance and reliability, this single configuration transistor is perfect for a wide range of applications. With a minimum DC current gain of 100 and a maximum collector current of 0.6 A, you can trust this transistor to deliver superior results. Whether you're working on consumer electronics, automotive systems, or industrial equipment, the PMBT2907A/CU,215 offers unparalleled value and efficiency. Upgrade your projects today with NXP Semiconductors!

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors allow for high-speed switching and are commonly used in amplification circuits.

Configuration: SINGLE

Single configuration transistors are simpler to design with and can be easier to troubleshoot compared to multiple transistor configurations.

Surface Mount: YES

Surface mount technology allows for smaller, lighter, and more compact electronic devices.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures that this transistor provides sufficient amplification for most applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without compromising performance.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor can handle moderate current levels safely.

Nominal Transition Frequency (fT): 200 MHz

A high nominal transition frequency of 200 MHz means this transistor can switch rapidly, making it suitable for high-frequency applications.

Technical Specifications

Other Function Transistors PMBT2907A/CU,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

PMBT2907A/CU,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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