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PMBT2222A/G,215

NXP Semiconductors

PMBT2222A/G,215 by NXP Semiconductors

The NXP Semiconductors PMBT2222A/G,215 is an NPN transistor with a single configuration for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 40, and max operating temp of 150°C. Ideal for circuits requiring high frequency operation up to 300MHz with a max collector current of 0.6A.

Median Price

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Lifecycle Status

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5

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1k+

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Chip Stock

USA . 50,000 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.693

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Semicontronic

India . 962 parts In-Stock

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$1.018

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Aztec Data Supply Inc.

USA . 329 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 650 parts In-Stock

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Ampacity Inc.

Singapore . 538 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unleash the power of innovation with the PMBT2222A/G,215 by NXP Semiconductors. Designed with precision and quality in mind, this NPN transistor offers unmatched performance and reliability. From amplification to switching applications, this versatile component provides endless possibilities for your projects. Experience the value and benefits of cutting-edge technology with the PMBT2222A/G,215 and take your creations to the next level.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for various circuit designs.

Configuration: Single

Single configuration transistors are easy to integrate into circuits and ideal for simple applications where only one transistor is needed.

Surface Mount: Yes

Surface mount compatibility allows for easy and space-saving assembly on circuit boards, making this product suitable for compact electronic devices.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power loads without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good signal amplification capability, making this transistor efficient in signal processing applications.

Maximum Operating Temperature: 150°C

The high maximum operating temperature of 150°C allows this transistor to withstand elevated temperatures, suitable for industrial or high-temperature environments.

Minimum Operating Temperature: -65°C

The low minimum operating temperature of -65°C ensures this transistor can function in cold environments or during temperature fluctuations without performance issues.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor is capable of handling moderate current loads, making it suitable for various electronic applications.

Nominal Transition Frequency (fT): 300 MHz

A high nominal transition frequency of 300 MHz indicates fast signal response and switching speed, making this transistor ideal for high-frequency applications such as RF circuits.

Technical Specifications

Other Function Transistors PMBT2222A/G,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

PMBT2222A/G,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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