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PMBT2907A/DG,215

NXP Semiconductors

PMBT2907A/DG,215 by NXP Semiconductors

NXP Semiconductors' PMBT2907A/DG,215 is a PNP transistor with max. power dissipation of 0.25W and min. DC current gain of 100. It operates at max. temp of 150°C, with max. collector current of 0.6A and transition frequency of 200MHz. Ideal for various electronic applications requiring a single PNP configuration in surface-mount technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,022 parts In-Stock

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2,022

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Digiode

USA . 1,885 parts In-Stock

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1,885

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Vyrian

USA . 460 parts In-Stock

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460

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,314 parts In-Stock

1+ parts

$0.400

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2,314

$0.400

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Corohmni

South Africa . 83 parts In-Stock

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$0.535

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83

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Advanced Electronics

New Zealand . 750 parts In-Stock

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$0.770

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$0.732

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$0.732

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750

$0.770

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$0.732

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AZTECH Wire

Italy . 773 parts In-Stock

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$11.887

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773

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Semicontronic

India . 1,376 parts In-Stock

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$49.050

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$47.824

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$47.578

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1,376

$49.050

$47.824

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One Stop Electronics

USA . 1,442 parts In-Stock

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$57.050

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1,442

$57.050

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Ampacity Inc.

Singapore . 350 parts In-Stock

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$64.050

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350

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Corphita

USA . 4,783 parts In-Stock

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UNI Independent Distributors

Spain . 3,401 parts In-Stock

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Argo Parts USA

USA . 1,932 parts In-Stock

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Continental Prestige Electronics

USA . 744 parts In-Stock

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744

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Elevate your electronic projects with the PMBT2907A/DG,215 by NXP Semiconductors. Crafted with precision and expertise, this PNP transistor offers unparalleled performance and reliability in a compact single configuration. From amplifiers to oscillators, this versatile component is a game-changer for any application. Experience seamless integration with its surface mount feature and unleash its maximum power dissipation of 0.25W. With a minimum DC current gain of 100 and a nominal transition frequency of 200 MHz, this transistor delivers exceptional results every time. Upgrade your projects today and discover the endless possibilities with the PMBT2907A/DG,215.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switch applications and can provide higher efficiency in certain circuit configurations.

Configuration: SINGLE

Single configuration transistors are easier to design with, troubleshoot, and replace compared to complex configurations such as Darlington pairs or multiple transistors in one package.

Surface Mount: YES

Surface mount transistors save space on the circuit board and are easier to manufacture with automated assembly processes.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power levels without overheating or getting damaged.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures stable and predictable performance in various circuit applications, providing consistent amplification of signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to be used in environments with elevated temperatures without compromising its performance.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor can handle relatively high current loads for its size and package, making it suitable for many applications.

Nominal Transition Frequency (fT): 200 MHz

A high nominal transition frequency of 200 MHz indicates that this transistor can efficiently switch between on and off states at high frequencies, making it ideal for RF applications or high-speed switching circuits.

Technical Specifications

Other Function Transistors PMBT2907A/DG,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

PMBT2907A/DG,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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