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PMBT2222A/IN,215

NXP Semiconductors

PMBT2222A/IN,215 by NXP Semiconductors

PMBT2222A/IN,215 by NXP Semiconductors is an NPN transistor with a max power dissipation of 0.25W and min DC current gain of 100. It operates b/w -65°C to 150°C, suitable for various applications requiring a collector current up to 0.6A and transition frequency of 300MHz in a surface-mount configuration.

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Lifecycle Status

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5

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1k+

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Chip Stock

USA . 106,000 parts In-Stock

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Anansix

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Vyrian

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 919 parts In-Stock

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$0.050

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Aztec Data Supply Inc.

USA . 428 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Corohmni

South Africa . 1,040 parts In-Stock

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AZTECH Wire

Italy . 792 parts In-Stock

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Semicontronic

India . 1,315 parts In-Stock

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One Stop Electronics

USA . 1,457 parts In-Stock

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Continental Prestige Electronics

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Brazil . 900 parts In-Stock

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Lucentia Tech

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Bastille Electronics

Australia . 300 parts In-Stock

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Argo Parts USA

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Overview

Unlock the power of innovation with the PMBT2222A/IN,215 by NXP Semiconductors. This NPN transistor offers superior quality and reliability, making it a go-to choice for a variety of applications. From amplifiers to switching circuits, this versatile component delivers maximum performance with a minimum footprint. Trust NXP Semiconductors to provide cutting-edge technology that meets your needs and exceeds your expectations. Experience the value and benefits of the PMBT2222A/IN,215 today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplifying and switching signals, making this product versatile in various electronic applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes this transistor easy to use for basic applications.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and potentially reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.25 W

With a decent power dissipation rating, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 indicates good amplification capabilities, allowing for effective signal amplification in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C provides flexibility in operating environments, making this transistor suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C enables this transistor to function reliably in colder environments, increasing its usability.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor can handle moderate current levels, making it suitable for various circuit configurations.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency of 300 MHz indicates good high-frequency performance, making this transistor suitable for applications requiring fast signal switching or amplification.

Technical Specifications

Other Function Transistors PMBT2222A/IN,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

PMBT2222A/IN,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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