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PMBT2222,235

NXP Semiconductors

PMBT2222,235 by NXP Semiconductors

The NXP Semiconductors PMBT2222,235 is a NPN BJT transistor with max VCEsat of 1.6V and hFE of 30, ideal for switching applications. It has a max IC of 0.6A, operates up to 150°C, and features a peak transition frequency of 250MHz. This small outline transistor in gull wing package is suitable for surface mount designs.

Median Price

$0.031

Lifecycle Status

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12

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1k+

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DigiKey

USA . 8,006 parts In-Stock

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$0.130

100+ parts

$0.050

1k+ parts

$0.031

10k+ parts

$0.021

8,006

$0.130

$0.050

$0.031

$0.021

Mouser Electronics

USA . 10,829 parts In-Stock

1+ parts

$0.140

100+ parts

$0.053

1k+ parts

$0.030

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$0.019

10,829

$0.140

$0.053

$0.030

$0.019

Rochester

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

$0.031

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$0.026

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$0.023

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-

$0.031

$0.026

$0.023

Verical

USA . 60,000 parts In-Stock

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Avnet

USA . 10,000 parts In-Stock

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$0.012

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Arrow

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Chip1Stop

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Digiode

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$0.021

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Chip Stock

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DigiKey Marketplace

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Vyrian

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AZTECH Wire

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Advanced Electronics

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$1.121

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$0.015

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Supply Digital

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Overview

Unlock the potential of your electronics with the PMBT2222,235 by NXP Semiconductors. Designed for switching applications, this small signal bipolar junction transistor offers reliable performance with a maximum VCEsat of 1.6V and a minimum DC current gain of 30. With a compact rectangular package style and gull wing terminals, this NPN transistor is perfect for surface mount designs. Trust in the quality and expertise of NXP Semiconductors to deliver high-quality components that enhance the functionality of your electronic devices. Upgrade your projects today with the PMBT2222,235 and experience the value and benefits it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the transistor lightweight and durable, ideal for applications where weight and durability are important.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing NPN circuit designs, making it a versatile choice for many applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and low power dissipation, making it efficient for switching circuits.

Maximum VCEsat: 1.6 V

With a low maximum VCEsat of 1.6 V, this transistor helps reduce power loss and heat dissipation in the circuit, improving overall efficiency.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage of 30 V allows for use in a wide range of voltage applications, providing flexibility in circuit design.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain of 30 ensures consistent and reliable amplification of the input signal, making this transistor suitable for various signal amplification tasks.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency of 250 MHz, this transistor is capable of handling high-frequency signals, making it a good choice for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PMBT2222,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH CURRENT DRIVER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1.6 V

Trade Compliance

PMBT2222,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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