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PHE13009,127

NXP Semiconductors

PHE13009,127 by NXP Semiconductors

NXP Semiconductors' PHE13009,127 is a NPN BJT transistor with 400V VCE, 12A IC, and 80W power dissipation. Ideal for switching applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.094

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,952 parts In-Stock

1+ parts

$1.500

100+ parts

$0.607

1k+ parts

$0.407

10k+ parts

$0.348

6,952

$1.500

$0.607

$0.407

$0.348

Avnet

USA . 5,000 parts In-Stock

1+ parts

-

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5,000

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EBV Elektronik

Germany . 5,000 parts In-Stock

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5,000

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RS (Exports)

UK . 3,485 parts In-Stock

1+ parts

-

100+ parts

$0.689

1k+ parts

$0.636

10k+ parts

$0.603

3,485

-

$0.689

$0.636

$0.603

Elektronika Sales Private Limited

India . 1,000 parts In-Stock

1+ parts

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1,000

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Distributors (In-Stock)

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Vyrian

USA . 2,838 parts In-Stock

1+ parts

$0.689

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2,838

$0.689

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Digiode

USA . 1,392 parts In-Stock

1+ parts

$0.760

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1,392

$0.760

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

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$1.750

10k+ parts

$1.590

4,000

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$1.750

$1.590

Anansix

USA . 1,572 parts In-Stock

1+ parts

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1,572

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ACDS - Activité Composants Distribution Service

France . 40 parts In-Stock

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40

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Distributors (Availability)

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Corphita

USA . 4,142 parts In-Stock

1+ parts

$0.720

100+ parts

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4,142

$0.720

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Component Stockers USA

USA . 15,032 parts In-Stock

1+ parts

$0.750

100+ parts

$0.420

1k+ parts

$0.340

10k+ parts

-

15,032

$0.750

$0.420

$0.340

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QUARKTWIN TECHNOLOGY LTD

USA . 20,110 parts In-Stock

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Perfect Parts

USA . 16,800 parts In-Stock

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16,800

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UNI Independent Distributors

Spain . 6,980 parts In-Stock

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6,980

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Eastek

USA . 5,000 parts In-Stock

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100+ parts

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1k+ parts

$0.587

10k+ parts

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5,000

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$0.587

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Cyclops Electronics Ltd (Excess)

UK . 40 parts In-Stock

1+ parts

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40

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT)? Look no further than the PHE13009,127 by NXP Semiconductors. This single NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum power dissipation of 80W. With a minimum DC current gain of 8 and a maximum collector current of 12A, this transistor provides exceptional performance and reliability. Whether you're working on industrial equipment or automotive electronics, the PHE13009,127 offers the value and benefits you need to get the job done right. Trust in NXP Semiconductors for top-of-the-line components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and operation, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in switching circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and mounting on circuit boards, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy soldering and connection in PCB assembly, ensuring secure and stable connections.

Maximum Power Dissipation (Abs): 80 W

High power dissipation capability enables the transistor to handle large amounts of power without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and secure mounting, making it suitable for rugged industrial environments.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain ensures consistent and reliable amplification of input signals, enabling stable performance in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate in demanding conditions without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating ensures safe and reliable operation in circuits with high voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 12 A

High collector current rating allows the transistor to handle large currents, making it ideal for high-power switching applications.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and ensures reliable electrical connections, enhancing the overall durability of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing complexity in circuit design and assembly.

Case Connection: COLLECTOR

Collector case connection design enhances thermal management and allows for efficient heat dissipation, ensuring prolonged device lifespan.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHE13009,127 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PHE13009,127 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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