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PHE13007,127

Ween Semiconductors

PHE13007,127 by Ween Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 8 A; JEDEC-95 Code: TO-220AB; Minimum DC Current Gain (hFE): 8;

Median Price

$1.100

Lifecycle Status

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8

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1k+

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DigiKey

USA . 3,204 parts In-Stock

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$1.100

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$0.452

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$0.316

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$0.289

3,204

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$0.289

Avnet

USA . 2,000 parts In-Stock

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Digiode

USA . 3,707 parts In-Stock

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$0.808

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Vyrian

USA . 377 parts In-Stock

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TME

Poland . 798 parts In-Stock

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$1.180

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$0.496

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$0.350

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NAC Semi

USA . 6,000 parts In-Stock

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Anansix

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ACDS - Activité Composants Distribution Service

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Component Stockers USA

USA . 8,671 parts In-Stock

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$0.690

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$0.400

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$0.290

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Corphita

USA . 1,760 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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UNI Independent Distributors

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Eastek

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Perfect Parts

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Metaverse IC Inc.

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Technical Specifications

Power Bipolar Junction Transistors (BJT) PHE13007,127 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Ween Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Reference Standard:

IEC-134

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PHE13007,127 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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