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PHE13003C

NXP Semiconductors

PHE13003C by NXP Semiconductors

PHE13003C by NXP is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 5, and supports up to 1.5A collector current. Its cylindrical package ensures easy integration in various circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 110,000 parts In-Stock

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Digiode

USA . 4,876 parts In-Stock

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4,876

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Vyrian

USA . 1,356 parts In-Stock

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Anansix

USA . 1,160 parts In-Stock

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1,160

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One Stop Electronics

USA . 288 parts In-Stock

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$58.050

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288

$58.050

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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UNI Independent Distributors

Spain . 7,011 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,920 parts In-Stock

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6,920

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Corphita

USA . 4,306 parts In-Stock

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4,306

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Perfect Parts

USA . 461 parts In-Stock

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461

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Unlock the potential of your electronic designs with the PHE13003C from NXP Semiconductors, a trusted leader in innovative technology. This reliable NPN power transistor delivers exceptional performance for switching applications, ensuring efficiency and longevity in your projects. Its robust plastic/epoxy construction promises durability, while the compact cylindrical package simplifies integration. Experience enhanced functionality and peace of mind knowing you're backed by NXP's commitment to quality and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN type allows for efficient switching and amplification, making it ideal for a wide range of electronic circuits and applications.

Configuration: SINGLE

A single configuration provides simplicity and ease of integration into circuit designs, enhancing usability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle fast on/off operations, making it ideal for power management.

Package Shape: ROUND

The round package shape aids in effective heat dissipation and improves the fit in various electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate strong mechanical connections and are easy to solder, ensuring reliable performance in robust applications.

No. of Terminals: 3

Having three terminals simplifies the circuit design while allowing for versatile connection options.

Package Style (Meter): CYLINDRICAL

A cylindrical package style enhances compatibility with various mounting systems and contributes to effective thermal management.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 indicates decent amplification capability, making this transistor useful for a variety of applications.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400 V, this product can handle high voltages, making it suitable for demanding power applications.

Transistor Element Material: SILICON

Silicon as the element material contributes to reliable performance and thermal stability, which is critical for electronic components.

Maximum Collector Current (IC): 1.5 A

The ability to handle a maximum collector current of 1.5 A makes this transistor suitable for moderately powered devices and applications.

Terminal Finish: TIN

Tin terminal finish enhances solderability and protects against corrosion, ensuring long-term reliability of connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for more compact designs and can improve layout flexibility within circuit boards.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHE13003C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PHE13003C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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