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PHE13003A,412

Ween Semiconductors

PHE13003A,412 by Ween Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 1 A; Package Shape: ROUND;

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 86 parts In-Stock

1+ parts

$0.400

100+ parts

$0.174

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$0.102

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$0.067

86

$0.400

$0.174

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$0.067

Element14

Singapore . 3,711 parts In-Stock

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$0.707

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$0.195

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$0.151

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$0.101

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Farnell

UK . 3,711 parts In-Stock

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Rochester

USA . 950 parts In-Stock

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$0.076

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$0.057

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$0.057

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.060

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Digiode

USA . 4,371 parts In-Stock

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Vyrian

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Anansix

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ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

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Ampacity Inc.

Singapore . 4,152 parts In-Stock

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$0.054

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Corphita

USA . 2,757 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Component Stockers USA

USA . 14,630 parts In-Stock

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$0.070

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$0.060

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$0.090

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Microchip USA

USA . 4,542 parts In-Stock

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$0.455

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QUARKTWIN TECHNOLOGY LTD

USA . 24,276 parts In-Stock

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iodParts Technologies Inc.

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UNI Independent Distributors

Spain . 7,964 parts In-Stock

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Perfect Parts

USA . 224 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 200 parts In-Stock

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Glotronic Ltd.

UK . 160 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) PHE13003A,412 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Ween Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.5 V

Trade Compliance

PHE13003A,412 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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