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PHE13003C,412

Ween Semiconductors

PHE13003C,412 by Ween Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;

Median Price

$0.446

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$0.431

100+ parts

$0.392

1k+ parts

$0.353

10k+ parts

-

200

$0.431

$0.392

$0.353

-

Mouser Electronics

USA . 3,709 parts In-Stock

1+ parts

$0.460

100+ parts

$0.180

1k+ parts

$0.108

10k+ parts

$0.085

3,709

$0.460

$0.180

$0.108

$0.085

DigiKey

USA . 8,523 parts In-Stock

1+ parts

$0.490

100+ parts

$0.190

1k+ parts

$0.127

10k+ parts

$0.091

8,523

$0.490

$0.190

$0.127

$0.091

Rochester

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.076

10k+ parts

$0.068

5,000

-

$0.092

$0.076

$0.068

Distributors (In-Stock)

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Digiode

USA . 3,955 parts In-Stock

1+ parts

$0.071

100+ parts

-

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3,955

$0.071

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Vyrian

USA . 4,543 parts In-Stock

1+ parts

$0.075

100+ parts

-

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4,543

$0.075

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DigiKey Marketplace

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Anansix

USA . 485 parts In-Stock

1+ parts

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485

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Distributors (Availability)

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Corphita

USA . 4,183 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

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4,183

$0.068

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-

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.431

100+ parts

$0.392

1k+ parts

$0.353

10k+ parts

-

200

$0.431

$0.392

$0.353

-

UNI Independent Distributors

Spain . 660 parts In-Stock

1+ parts

-

100+ parts

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660

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Technical Specifications

Power Bipolar Junction Transistors (BJT) PHE13003C,412 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Ween Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

Maximum Fall Time (tf):

700 ns

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

1.5 V

Trade Compliance

PHE13003C,412 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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