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PHE13005X

Ween Semiconductors

PHE13005X by Ween Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 26 W; Maximum Collector Current (IC): 4 A; No. of Terminals: 3;

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Digiode

USA . 3,326 parts In-Stock

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Vyrian

USA . 2,604 parts In-Stock

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Anansix

USA . 1,856 parts In-Stock

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One Stop Electronics

USA . 1,585 parts In-Stock

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$63.050

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Kepictronics

USA . 13,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,839 parts In-Stock

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Corphita

USA . 2,923 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

Spain . 638 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) PHE13005X attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Ween Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

Maximum Fall Time (tf):

900 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4900 ns

Maximum VCEsat:

1 V

Trade Compliance

PHE13005X Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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