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PDTA123EU,115

NXP Semiconductors

PDTA123EU,115 by NXP Semiconductors

PDTA123EU,115 by NXP Semiconductors is a PNP BJT transistor with 3 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,737 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

1k+ parts

$0.040

10k+ parts

$0.028

9,737

$0.170

$0.063

$0.040

$0.028

DigiKey

USA . 2,924 parts In-Stock

1+ parts

$0.180

100+ parts

$0.066

1k+ parts

$0.042

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-

2,924

$0.180

$0.066

$0.042

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Newark

USA . 990 parts In-Stock

1+ parts

$0.298

100+ parts

$0.109

1k+ parts

$0.068

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-

990

$0.298

$0.109

$0.068

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Rochester

USA . 369,321 parts In-Stock

1+ parts

-

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$0.032

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$0.027

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$0.024

369,321

-

$0.032

$0.027

$0.024

Verical

USA . 275,457 parts In-Stock

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Future Electronics

Canada . 27,000 parts In-Stock

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$0.018

27,000

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$0.018

Farnell

UK . 990 parts In-Stock

1+ parts

-

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$0.046

10k+ parts

$0.035

990

-

-

$0.046

$0.035

Element14

Singapore . 990 parts In-Stock

1+ parts

-

100+ parts

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$0.076

10k+ parts

$0.060

990

-

-

$0.076

$0.060

Distributors (In-Stock)

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Flip Electronics

USA . 54,000 parts In-Stock

1+ parts

$0.003

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-

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54,000

$0.003

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Digiode

USA . 2,299 parts In-Stock

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$0.021

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2,299

$0.021

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TME

Poland . 3,262 parts In-Stock

1+ parts

$0.110

100+ parts

$0.048

1k+ parts

$0.029

10k+ parts

$0.025

3,262

$0.110

$0.048

$0.029

$0.025

Bristol Electronics

USA . 7,666 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

$0.056

10k+ parts

$0.011

7,666

$0.113

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$0.056

$0.011

Chip Stock

USA . 48,000 parts In-Stock

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Vyrian

USA . 7,423 parts In-Stock

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7,423

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R&J Components

USA . 3,000 parts In-Stock

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Anansix

USA . 1,845 parts In-Stock

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1,845

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Distributors (Availability)

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Corphita

USA . 2,745 parts In-Stock

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$0.020

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2,745

$0.020

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Component Stockers USA

USA . 227,258 parts In-Stock

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$0.020

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$0.020

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$0.020

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$0.010

227,258

$0.020

$0.020

$0.020

$0.010

AZTECH Wire

Italy . 11,402 parts In-Stock

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$0.100

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11,402

$0.100

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Perfect Parts

USA . 564,480 parts In-Stock

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564,480

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GreenTree Electronics

Israel . 36,000 parts In-Stock

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Eastek

USA . 33,000 parts In-Stock

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UNI Independent Distributors

Spain . 7,568 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,980 parts In-Stock

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$0.033

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$0.025

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$0.018

2,980

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$0.033

$0.025

$0.018

Supply Digital

USA . 1,281 parts In-Stock

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Overview

Upgrade your electronics with the NXP Semiconductors PDTA123EU,115 Small Signal Bipolar Junction Transistor. With a single configuration and built-in resistor, this PNP transistor is perfect for switching applications. Its high-quality design and reliable performance make it a must-have for any project. Experience the value and benefits of using NXP Semiconductors products, known for their durability and innovation. Trust in the PDTA123EU,115 to deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Helps to provide good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications, making this product suitable for such purposes.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Having a built-in resistor simplifies the design and saves space on the PCB, making it a convenient choice for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly on PCBs, making it suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and fits well within the standard footprint, making it compatible with various designs.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and ensures proper functionality in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, it can handle moderate power levels efficiently, suitable for many applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 30

Having a minimum DC current gain of 30 ensures stable and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures up to 150°C, making it suitable for demanding operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Capable of handling high collector-emitter voltage of up to 50V, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and reliability, making it a suitable choice for various applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling maximum collector current of 0.1A, suitable for low to moderate current applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures reliable electrical connections.

Terminal Position: DUAL

Having dual terminal position provides flexibility in circuit design and layout, ensuring efficient connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for up to 30 seconds, ensuring proper soldering and assembly on the PCB.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperature of 260°C, ensuring reliable soldering during assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA123EU,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTA123EU,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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