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NX3L1G3157GW-Q100

NXP Semiconductors

NX3L1G3157GW-Q100 by NXP Semiconductors

NX3L1G3157GW-Q100 by NXP Semiconductors is a SPDT switch with 6 terminals, operating at -40 to 125 °C. It has a max Ron of 4.1 ohm and fast switching times of 52 ns on and 30 ns off. Ideal for automotive applications due to AEC-Q100 screening level and compact design.

Median Price

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Lifecycle Status

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Digiode

USA . 1,680 parts In-Stock

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Vyrian

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Anansix

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Nova Conductors

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One Stop Electronics

USA . 1,417 parts In-Stock

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Ampacity Inc.

Singapore . 1,179 parts In-Stock

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AZTECH Wire

Italy . 768 parts In-Stock

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Aztec Data Supply Inc.

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Corohmni

South Africa . 916 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Aranea Global

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Overview

Upgrade your automotive electronics with the NX3L1G3157GW-Q100 from NXP Semiconductors, a leading manufacturer in the industry. This versatile SPDT switch offers seamless multiplexing capabilities in a compact package, making it ideal for a wide range of automotive applications. With a temperature grade of AEC-Q100 and high-quality construction, this switch ensures reliable performance even in extreme conditions. Trust NXP Semiconductors to deliver cutting-edge technology that enhances the functionality of your automotive systems. Experience the value and benefits of the NX3L1G3157GW-Q100 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers durability and protection for the internal components of the multiplexer/switch, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time during production and reducing overall manufacturing costs.

Nominal Supply Voltage (Vsup): 1.5 V

Operates efficiently at a low voltage, making it suitable for a wide range of applications and power sources.

Maximum On-state Resistance (Ron): 4.1 ohm

Low on-state resistance ensures minimal signal loss and distortion when the switch is on, maintaining signal integrity.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the multiplexer/switch energy-efficient and reliable in various operating conditions.

Nominal Off-state Isolation: 90 dB

High off-state isolation ensures that signals are properly separated when the switch is off, reducing crosstalk and interference between channels.

Technical Specifications

Multiplexers & Switches NX3L1G3157GW-Q100 attributes and parameters. Explore more Multiplexers & Switches devices from NXP Semiconductors

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G6

Length:

2 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Nominal Off-state Isolation:

90 dB

Nominal On-state Resistance Match:

.04 ohm

Maximum On-state Resistance (Ron):

4.1 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

1.4 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

52 ns

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

1.25 mm

Trade Compliance

NX3L1G3157GW-Q100 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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