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NX3L1G3157GM

NXP Semiconductors

NX3L1G3157GM by NXP Semiconductors

NX3L1G3157GM by NXP Semiconductors is a SPDT switch with 6 terminals, operating at -40 to 125 °C. It has a low on-state resistance of 1.7 ohm and fast switching times of 52 ns on and 30 ns off. Ideal for automotive applications due to its CMOS technology and high isolation of 90 dB.

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Chip Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 442 parts In-Stock

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One Stop Electronics

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Corohmni

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AZTECH Wire

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Aztec Data Supply Inc.

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Overview

Upgrade your electronics with the NX3L1G3157GM by NXP Semiconductors, a high-quality multiplexer that offers unparalleled performance and reliability. This versatile component is designed to meet the demands of various applications in automotive and consumer electronics. With NXP's reputation for excellence in semiconductor manufacturing, you can trust that this product delivers exceptional value and benefits. Enhance your designs with the NX3L1G3157GM and experience the advantages of superior quality and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to harsh environments, making the product suitable for a wide range of applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage (Vsup): 1.65 V

Optimal operating voltage for efficient performance and power consumption.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for automotive and industrial use.

Maximum Seated Height: 0.5 mm

Low profile design for compact and space-saving applications.

Nominal On-state Resistance Match: 0.2 ohm

Precision in resistance matching ensures reliable and consistent performance in circuit switching.

Technical Specifications

Multiplexers & Switches NX3L1G3157GM attributes and parameters. Explore more Multiplexers & Switches devices from NXP Semiconductors

Specs

Other IC type:

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Length:

1.45 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Nominal Off-state Isolation:

90 dB

Nominal On-state Resistance Match:

.2 ohm

Maximum On-state Resistance (Ron):

1.7 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.6/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.5 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

1.4 V

Nominal Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

52 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1 mm

Trade Compliance

NX3L1G3157GM Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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