Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
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Corphita
RF Power Field Effect Transistors (FET) MRF7S15100HSR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
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MRF7S15100HSR3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
SS14
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
EU2B-YS3203F
Idec
ROTARY SWITCH;
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
MBRS3200T3G
Onsemi
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
LM317BD2TG
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
Kec
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
1N4148WT
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Secos
A3T21H450W23SR6
NXP Semiconductors
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Power Gain (Gp): 14.2 dB; Minimum Operating Temperature: -40 Cel;
STAC2933
STMicroelectronics
STAC2933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR technology transistor offers reliable performance in demanding environments.
TGF4212SCCX
TGF4212SCCX by Texas Instruments is an N-CHANNEL RF Power FET for amplifier applications. Operating in DEPLETION MODE, it offers a Min DS Breakdown Voltage of 10V and works in the KU BAND frequency range. This surface-mount transistor uses GALLIUM ARSENIDE technology with 4 terminals in a RECTANGULAR package.
A2T08VD020NT1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Terminal Finish: TIN; Case Connection: SOURCE; Moisture Sensitivity Level (MSL): 3;
MRF6VP121KHR5
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
CGHV96050F2
Wolfspeed
Wolfspeed's CGHV96050F2 is an N-CHANNEL RF Power FET for X BAND applications. Features include 100V DS Breakdown Voltage, 10dB Power Gain, and 6A Drain Current. Ideal for AMPLIFIER use with HIGH ELECTRON MOBILITY GaN technology, operating from -40°C to 125°C in a FLANGE MOUNT package.
CLF1G0035S-100
RF Power Field-Effect Transistors;
A5G35S008N-3400
PTVA101K02EVV1R0XTMA1
Infineon Technologies
Infineon's PTVA101K02EVV1R0XTMA1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage. It operates in L BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR device has a max temp of 225°C and comes in a FLANGE MOUNT package shape.
FLL120MK
Sumitomo Electric Industries
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: JUNCTION;
FLU35XM
Fujitsu
FLU35XM by Fujitsu is a N-CHANNEL RF FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for L BAND applications, it features 15W Power Dissipation, GALLIUM ARSENIDE technology, and can withstand up to 175°C.
PD54008S-E-E
PD54008S-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
STAC4932B
STAC4932B by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min DS breakdown voltage, operates in the ultra-high frequency band, and supports surface mount with a max temp of 200 °C. Ideal for high-performance RF circuits.
SD2920
SD2920 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max DS breakdown voltage of 125V, operates at very high frequencies, and supports a drain current of up to 13.9A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
CGH40045F
CGH40045F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for S BAND applications. Featuring HIGH ELECTRON MOBILITY GaN technology, it operates in ENHANCEMENT MODE at up to 175°C. This FLANGE MOUNT transistor has a METAL-SEALED COFIRED CERAMIC package and GOLD OVER NICKEL terminal finish.
LET20045C
LET20045C by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in L BAND frequency range. With 12A Drain Current and 130W Power Dissipation, it's a high-performance transistor suitable for various RF power amplification needs.
TIM0910-15L
Toshiba
The Toshiba TIM0910-15L is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in X band. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 11.5A max drain current and 60W power dissipation at 175°C ambient temperature.
MRF134
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Package Shape: ROUND; Maximum Drain Current (Abs) (ID): .9 A;
AFT09MS031NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 317 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
MRF1518NT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PQSO-N4; Package Shape: RECTANGULAR;
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MRF7P20040HSR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;
NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.
MRF7S19210HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F2;
MRF7S18170HSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;
MRF7S19170HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Qualification: Not Qualified; No. of Elements: 1;
MRF7S18125BHSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: SOURCE; No. of Terminals: 2;
MRF7S19210HSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;
MRF7S18125AHR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;
MRF7S19080HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Case Connection: SOURCE; Transistor Application: AMPLIFIER;
MRF7S19080HSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; Case Connection: SOURCE;
MRF7S19120NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3;
MRF7S18125BHR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MRF7S19170HSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 1;
MRF7S15100HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Operating Temperature: 225 Cel; Terminal Position: DUAL;
MRF7S18170HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Operating Mode: ENHANCEMENT MODE;
MRF7P20040HR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; JESD-30 Code: R-CDFM-F4; Transistor Application: AMPLIFIER;
MRF7S19100NBR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDFM-F4; Transistor Application: AMPLIFIER; Terminal Form: FLAT;
MRF7S18125AHSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Transistor Element Material: SILICON; Maximum Operating Temperature: 225 Cel;
MRF7S19100NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
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