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MMBZ33VAL,215

NXP Semiconductors

MMBZ33VAL,215 by NXP Semiconductors

NXP Semiconductors' MMBZ33VAL,215 is a transient suppression device with 2 elements in common anode configuration. It offers a breakdown voltage of 33V and max clamping voltage of 46V. Ideal for applications requiring protection against voltage transients in compact electronic circuits.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$0.071

100+ parts

$0.068

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$0.068

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40

$0.071

$0.068

$0.068

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Element14

Singapore . 63,079 parts In-Stock

1+ parts

$0.500

100+ parts

$0.168

1k+ parts

$0.098

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63,079

$0.500

$0.168

$0.098

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Farnell

UK . 67,549 parts In-Stock

1+ parts

-

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$0.084

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$0.042

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$0.034

67,549

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$0.084

$0.042

$0.034

Future Electronics

Canada . 36,000 parts In-Stock

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$0.026

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$0.026

TTI

USA . 30,000 parts In-Stock

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$0.027

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Chip1Stop

Japan . 22,973 parts In-Stock

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Arrow

USA . 20,623 parts In-Stock

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$0.028

20,623

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Verical

USA . 20,623 parts In-Stock

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$0.029

20,623

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$0.029

EBV Elektronik

Germany . 18,000 parts In-Stock

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RS (Exports)

UK . 7,650 parts In-Stock

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$0.155

10k+ parts

$0.098

7,650

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$0.155

$0.098

Distributors (In-Stock)

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Digiode

USA . 2,315 parts In-Stock

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$0.067

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$0.067

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Nova Conductors

Japan . 50 parts In-Stock

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$0.097

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50

$0.097

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TME

Poland . 20 parts In-Stock

1+ parts

$0.130

100+ parts

$0.083

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20

$0.130

$0.083

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Bristol Electronics

USA . 1,790 parts In-Stock

1+ parts

$0.188

100+ parts

$0.094

1k+ parts

$0.037

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1,790

$0.188

$0.094

$0.037

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Chip Stock

USA . 69,000 parts In-Stock

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NAC Semi

USA . 60,000 parts In-Stock

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$0.046

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$0.046

IBS Electronics

USA . 39,000 parts In-Stock

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$0.037

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$0.037

LIBRA Elektronik GmbH

Germany . 18,000 parts In-Stock

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Vyrian

USA . 3,959 parts In-Stock

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Anansix

USA . 2,438 parts In-Stock

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2,438

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Distributors (Availability)

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Ampacity Inc.

Singapore . 113,757 parts In-Stock

1+ parts

$0.021

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113,757

$0.021

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Semicontronic

India . 71,572 parts In-Stock

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$0.025

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$0.024

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$0.024

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71,572

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Corphita

USA . 2,846 parts In-Stock

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$0.064

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.071

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$0.068

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$0.068

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40

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AZTECH Wire

Italy . 6,458 parts In-Stock

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$0.080

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Argo Parts USA

USA . 2,527 parts In-Stock

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$0.097

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$0.095

2,527

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Netroflash

USA . 2,000 parts In-Stock

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$0.097

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$0.093

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$0.091

2,000

$0.097

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$0.091

Corohmni

South Africa . 695 parts In-Stock

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$0.125

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$0.125

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Aztec Data Supply Inc.

USA . 265 parts In-Stock

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$0.162

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Perfect Parts

USA . 21,382,585 parts In-Stock

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GreenTree Electronics

Israel . 906,000 parts In-Stock

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Resion (Excess)

USA . 90,000 parts In-Stock

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Continental Prestige Electronics

USA . 58,545 parts In-Stock

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$0.146

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$0.065

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$0.042

58,545

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$0.146

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$0.042

Eastek

USA . 39,000 parts In-Stock

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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4,800

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 2,343 parts In-Stock

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UNI Independent Distributors

Spain . 156 parts In-Stock

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156

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Overview

Experience the superior quality and reliability of NXP Semiconductors with the MMBZ33VAL,215 transient suppression device. Designed for common anode configuration with two elements, this small outline package offers maximum protection against voltage spikes in a wide range of applications. With a nominal breakdown voltage of 33V and maximum clamping voltage of 46V, this diode ensures your electronics stay safe and secure. Trust NXP to deliver exceptional performance and peace of mind with the MMBZ33VAL,215.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W

Can handle high power surges effectively, protecting the connected equipment or circuit.

Nominal Breakdown Voltage: 33 V

Provides effective voltage clamping, preventing damage to sensitive components during voltage spikes.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, making it suitable for various environments and applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Uses special diode technology for effective transient suppression, ensuring reliable protection against voltage spikes.

Technical Specifications

Transient Suppression Devices MMBZ33VAL,215 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

34.65 V

Minimum Breakdown Voltage:

31.35 V

Nominal Breakdown Voltage:

33 V

Maximum Clamping Voltage:

46 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.36 W

Maximum Repetitive Peak Reverse Voltage:

26 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ33VAL,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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