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BFT46

NXP Semiconductors

BFT46 by NXP Semiconductors

NXP Semiconductors' BFT46 is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features GULL WING terminals, operates in DEPLETION MODE, and has a max power dissipation of 0.25W. The transistor's small outline package style and junction technology make it suitable for various electronic devices.

Median Price

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Lifecycle Status

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9

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1k+

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Chip Stock

USA . 4,267 parts In-Stock

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Anansix

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Digiode

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ACDS - Activité Composants Distribution Service

France . 395 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 100 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.788

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$0.717

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$0.646

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Corohmni

South Africa . 278 parts In-Stock

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One Stop Electronics

USA . 1,006 parts In-Stock

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Glotronic Ltd.

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Corphita

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Futuretech Components

Singapore . 414 parts In-Stock

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Overview

Experience superior performance with the BFT46 by NXP Semiconductors, a top-of-the-line Small Signal Field Effect Transistor. Designed for amplifiers, this N-CHANNEL transistor offers unrivaled efficiency and reliability. Made with high-quality materials and advanced technology, this product is perfect for various applications. Upgrade your electronics with the BFT46 and enjoy enhanced functionality and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs have better conductivity and faster switching speed compared to P-Channel FETs, making this transistor ideal for high-performance applications.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Facilitates easy installation and soldering onto circuit boards, making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 25 V

With a high breakdown voltage, the transistor can handle higher voltages without damage, ensuring reliability in operation.

Package Shape: RECTANGULAR

Compact shape allows for efficient use of space on a circuit board, especially in small electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and stability during soldering, enhancing the durability of the transistor.

Operating Mode: DEPLETION MODE

Depletion mode FETs offer better control over current flow, making this transistor suitable for applications where precise current regulation is required.

No. of Terminals: 3

Simplified design with three terminals allows for easy integration into circuits while providing essential connectivity options.

Maximum Power Dissipation (Abs): 0.25 W

Can handle higher power dissipation levels without overheating, ensuring long-term reliability in operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on a circuit board, making it ideal for compact electronic devices with limited space.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and fast response times, making this transistor suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, ensuring reliable operation in various environmental conditions.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance characteristics, including high speed and low power consumption, making this transistor a reliable choice for various applications.

Terminal Finish: Tin (Sn)

Tin terminals provide good conductivity and solderability, ensuring secure connections and reliable performance.

Maximum Drain Current (ID): 0.01 A

Can handle higher drain currents, making it suitable for applications that require high current carrying capacity.

Terminal Position: DUAL

Dual terminal configuration simplifies circuit connections and facilitates easy integration into existing electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified time, ensuring reliability during the manufacturing process.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during the manufacturing process without performance degradation.

Maximum Feedback Capacitance (Crss): 1.5 pF

Low feedback capacitance minimizes signal loss and interference, ensuring high signal fidelity in amplification applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BFT46 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

.01 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.5 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BFT46 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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