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BFT46-TAPE-13

NXP Semiconductors

BFT46-TAPE-13 by NXP Semiconductors

BFT46-TAPE-13 by NXP Semiconductors is an N-channel FET designed for amplifier applications. It features a 25V min DS breakdown voltage, operates in depletion mode, and supports surface mount with a max temp of 150 °C. Ideal for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,363 parts In-Stock

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4,363

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Digiode

USA . 2,934 parts In-Stock

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2,934

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Anansix

USA . 2,250 parts In-Stock

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2,250

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Distributors (Availability)

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Native Components

USA . 314 parts In-Stock

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$15.530

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314

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Northwest PG Solutions

USA . 1,665 parts In-Stock

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$17.083

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$15.375

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1,665

$17.083

$15.375

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One Stop Electronics

USA . 419 parts In-Stock

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$60.050

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419

$60.050

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UNI Independent Distributors

Spain . 7,967 parts In-Stock

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7,967

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Corphita

USA . 590 parts In-Stock

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590

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Overview

Experience unparalleled performance with the BFT46-TAPE-13 from NXP Semiconductors, a trusted leader in innovation. This top-tier N-channel FET excels in amplification, providing precision and reliability for your electronic designs. Its compact surface mount design ensures seamless integration into diverse applications, from consumer electronics to telecommunications. Count on NXP's expertise to deliver quality and efficiency that elevate your projects to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, resulting in better performance and efficiency for amplifier applications.

Configuration: SINGLE

A single configuration simplifies circuit design, making it an effective choice for applications requiring compact and efficient layouts.

Transistor Application: AMPLIFIER

Designed specifically for amplifier use, this FET provides optimal performance for signal processing in various electronic devices.

Surface Mount: YES

Surface mount technology enables better circuit density and reduces assembly costs, suitable for modern compact electronics.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this FET can safely operate in a variety of circuits without risk of failure, enhancing reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for easier placement and efficient use of space on printed circuit boards, facilitating assembly.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability during soldering and are easier to mount, improving assembly reliability.

Operating Mode: DEPLETION MODE

Depletion mode operation offers unique functionality suitable for specific applications where less current flow is essential, such as in analog circuits.

No. of Terminals: 3

The three-terminal configuration is standard for effective control and operation in various circuit designs, allowing for versatility.

Package Style (Meter): SMALL OUTLINE

The small outline package style facilitates compactness and efficiency in design, making the product ideal for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Junction technology enhances performance characteristics, contributing to lower power consumption and greater efficiency in signal amplification.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C indicates high thermal performance, allowing the transistor to function effectively in demanding environments.

Transistor Element Material: SILICON

Silicon is a widely used material in electronics due to its excellent electrical properties, ensuring reliable performance and longevity.

Maximum Drain Current (ID): 0.01 A

With a maximum drain current of 10mA, this FET is suitable for low-power applications, providing flexibility for small-signal processing.

Terminal Position: DUAL

The dual terminal position allows for improved layout options and connectivity in circuit designs, enhancing versatility.

Maximum Feedback Capacitance (Crss): 1.5 pF

A low feedback capacitance (1.5 pF) minimizes signal distortion and maximizes bandwidth, making this FET ideal for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BFT46-TAPE-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

.01 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.5 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BFT46-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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