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BFT46-TAPE-7

NXP Semiconductors

BFT46-TAPE-7 by NXP Semiconductors

BFT46-TAPE-7 by NXP Semiconductors is an N-channel FET designed for amplifier applications. It features a 25V min DS breakdown voltage, operates in depletion mode, and supports surface mount with a max temp of 150 °C. Ideal for compact electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,386 parts In-Stock

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3,386

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Vyrian

USA . 2,485 parts In-Stock

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2,485

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Anansix

USA . 1,444 parts In-Stock

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1,444

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Native Components

USA . 60 parts In-Stock

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$0.754

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60

$0.754

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Northwest PG Solutions

USA . 1,995 parts In-Stock

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$0.829

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1,995

$0.829

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One Stop Electronics

USA . 677 parts In-Stock

1+ parts

$25.050

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677

$25.050

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UNI Independent Distributors

Spain . 6,115 parts In-Stock

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Corphita

USA . 4,729 parts In-Stock

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4,729

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Overview

Unlock the potential of your projects with the BFT46-TAPE-7 from NXP Semiconductors, a leader in semiconductor innovation. This high-quality N-channel FET excels in amplifier applications, ensuring reliability and superior performance even in demanding environments. With its compact design and surface mount capability, it seamlessly integrates into diverse electronic systems, enhancing efficiency and boosting your product's value. Elevate your designs with NXP's trusted technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance against environmental factors, ensuring reliable performance in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their high electron mobility, enabling faster switching speeds and improved efficiency, making them ideal for amplifier applications.

Configuration: SINGLE

A single configuration simplifies circuit design and footprint, allowing for easier integration into smaller electronic devices.

Transistor Application: AMPLIFIER

Designed for amplification duties, this transistor enhances signal strength, making it suitable for audio and RF applications.

Surface Mount: YES

Surface mount technology allows for compact design and automated assembly processes, reducing manufacturing costs and improving reliability.

Minimum DS Breakdown Voltage: 25 V

A breakdown voltage of 25 V ensures reliable operation in various voltage environments, making it suitable for diverse applications.

Package Shape: RECTANGULAR

Rectangular packaging design aids in efficient space utilization on PCBs, making it easier to fit into various layouts.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve mechanical stability, ensuring connection reliability in surface mount applications.

Operating Mode: DEPLETION MODE

The depletion mode operation allows for low power consumption and better control of output currents in amplifier circuits.

No. of Terminals: 3

A 3-terminal configuration provides simplicity in design while still offering adequate control over the device's operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes space requirements, making it ideal for compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides enhanced performance attributes, such as improved noise margins and stability in amplifier applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can perform reliably in high-temperature environments, enhancing versatility.

Transistor Element Material: SILICON

Silicon's wide availability, robustness, and favorable electronic properties make this FET a reliable choice for various applications.

Maximum Drain Current (ID): 0.01 A

A maximum drain current of 0.01 A supports moderate power applications, providing flexibility in circuit designs.

Terminal Position: DUAL

Dual terminal positioning aids in better routing on the PCB, enhancing overall design efficiency.

Maximum Feedback Capacitance (Crss): 1.5 pF

A low feedback capacitance of 1.5 pF contributes to faster switching speeds and improved frequency response in amplifier circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) BFT46-TAPE-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

.01 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.5 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BFT46-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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