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BFQ52

NXP Semiconductors

BFQ52 by NXP Semiconductors

The NXP Semiconductors BFQ52 is a PNP RF BJT transistor with 15V VCE, 0.025A IC, and 5000MHz fT. Ideal for ultra-high frequency band amplification applications due to its silicon element material and cylindrical package style. Features a metal body, single configuration, and shielded case connection for optimal performance.

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Digiode

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EMSNET

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Anansix

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ComSIT Distribution GmbH

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Fibra_Brandt Electronic GMBH

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Nova Conductors

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Bristol Electronics

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Atlantic Semiconductor

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Tech-Mark Corp

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LittleDiode

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One Stop Electronics

USA . 905 parts In-Stock

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Overview

Enhance your electronic projects with the BFQ52 by NXP Semiconductors, a top-quality RF Small Signal Bipolar Junction Transistor that offers superior performance and reliability. Manufactured by industry leader NXP Semiconductors, this PNP transistor is perfect for amplifier applications in the ultra-high frequency band. With a maximum collector-emitter voltage of 15V and a nominal transition frequency of 5000 MHz, the BFQ52 delivers exceptional value and performance for your projects. Upgrade your designs with the BFQ52 and experience cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides durability and helps in efficient heat dissipation, making the transistor suitable for high-performance applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various electronic devices.

Terminal Form: WIRE

Wire terminals facilitate easy connection and soldering, enhancing the usability of the transistor in electronic assemblies.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, providing high-speed performance and accurate signal amplification.

No. of Terminals: 3

Three terminals enable versatile circuit connections and configurations, allowing for flexibility in circuit design.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor and efficient use of space in electronic layouts.

Maximum Collector-Emitter Voltage: 15 V

With a maximum voltage rating of 15V, this transistor can withstand higher voltage levels, ensuring reliability in the circuit.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high performance and reliability, enhancing the overall quality of the transistor.

Maximum Collector Current (IC): 0.025 A

With a maximum collector current of 0.025A, this transistor can handle moderate current levels, making it suitable for various amplification applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering, enhancing the convenience of integrating the transistor into circuit boards.

Case Connection: SHIELD

Shielded case connection provides electromagnetic interference (EMI) protection, ensuring reliable operation in noisy electronic environments.

Nominal Transition Frequency (fT): 5000 MHz

With a high nominal transition frequency of 5000 MHz, this transistor offers excellent high-frequency performance, making it suitable for applications requiring fast signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFQ52 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SHIELD

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFQ52 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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